FIR80N03LG Todos los transistores

 

FIR80N03LG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FIR80N03LG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 88 nS
   Cossⓘ - Capacitancia de salida: 268 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: TO-252
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FIR80N03LG Datasheet (PDF)

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 fir80n03lg.pdf pdf_icon

FIR80N03LG

FIR80N03LG80A,30V N-CHANNEL MOSFET-EPIN Connection TO-252(D-PAK)DESCRIPTION DThe is an N-channel enhancement mode power MOS FIR80N03LGfield effect transistor which is produced using Silan's LVMOS Gtechnology. The improved process and cell structure have been Sespecially tailored to minimize on-state resistance, provide superior switching performance. This device is w

 7.1. Size:3622K  first semi
 fir80n08pg.pdf pdf_icon

FIR80N03LG

FIR80N08PGN-Channel Enhancement Mode Power Mosfet-DPIN Connection TO-220DescriptionThe FIR80N08PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =80V,ID =80A RDS(ON)

 8.1. Size:2326K  first semi
 fir80n10lg.pdf pdf_icon

FIR80N03LG

FIR80N10LG100V N-Channel MOSFET TO-252Features: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg= 19.8nC (Typ.). BVDSS=100V,ID=80A RDS(on) : 0.035 (Max) @VG=10V1.Gate (G) 100% Avalanche Tested2.Drain (D)3.Sourse (S)Marking DiagramYAWWY = YearFIR80N10LA = Assembly

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History: NTB6410AN | SDF1NA60

 

 
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