FIR80N03LG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FIR80N03LG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 88 nS
Cossⓘ - Capacitancia de salida: 268 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
Encapsulados: TO-252
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FIR80N03LG datasheet
fir80n03lg.pdf
FIR80N03LG 80A,30V N-CHANNEL MOSFET-E PIN Connection TO-252(D-PAK) DESCRIPTION D The is an N-channel enhancement mode power MOS FIR80N03LG field effect transistor which is produced using Silan's LVMOS G technology. The improved process and cell structure have been S especially tailored to minimize on-state resistance, provide superior switching performance. This device is w
fir80n08pg.pdf
FIR80N08PG N-Channel Enhancement Mode Power Mosfet-D PIN Connection TO-220 Description The FIR80N08PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =80V,ID =80A RDS(ON)
fir80n10lg.pdf
FIR80N10LG 100V N-Channel MOSFET TO-252 Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg= 19.8nC (Typ.). BVDSS=100V,ID=80A RDS(on) 0.035 (Max) @VG=10V 1.Gate (G) 100% Avalanche Tested 2.Drain (D) 3.Sourse (S) Marking Diagram YAWW Y = Year FIR80N10L A = Assembly
Otros transistores... FIR6N40FG, FIR6N60FG, FIR6N65FG, FIR6N70FG, FIR6N90FG, FIR7NS65AFG, FIR7NS70AFG, FIR7NS70ALG, 10N65, FIR80N08PG, FIR80N10LG, FIR8N60FG, FIR8N65FG, FIR8N70FG, FIR8N80FG, FIR96N08PG, FIR9N50FG
History: BUK7S0R7-40H
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