DACMI240N120BZK Todos los transistores

 

DACMI240N120BZK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DACMI240N120BZK
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 930 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 18 V
   |Id|ⓘ - Corriente continua de drenaje: 240 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 81 nS
   Cossⓘ - Capacitancia de salida: 544 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: SOT227

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DACMI240N120BZK Datasheet (PDF)

 0.1. Size:400K  dacosemi
dacmi240n120bzk.pdf

DACMI240N120BZK
DACMI240N120BZK

DACMI240N120BZKSilicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Tpy.10 m@ VGS = 18V Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters Swi

 8.1. Size:386K  dacosemi
dacmi250n120bzk3.pdf

DACMI240N120BZK
DACMI240N120BZK

DACMI250N120BZK3Silicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Tpy.13 m@ V = 15 VGS Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters

 9.1. Size:457K  dacosemi
dacmi060n120bzk.pdf

DACMI240N120BZK
DACMI240N120BZK

DACMI060N120BZKSilicon Carbide Enhancement Mode MOSFETSOT-227PreliminaryFeaturesKSG VDSS = 1200VD RDS(ON) Tpy. 40 m@ V GS = 20 V Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters

 9.2. Size:385K  dacosemi
dacmi450n120bzk3.pdf

DACMI240N120BZK
DACMI240N120BZK

DACMI450N120BZK3Silicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Typ. 5 m@ VGS = 15V Fully Avalanche Rated SDG Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Dimensions in inches and (millimeters) Electrically Isolation base plateApplications Solar Inverters Sw

 9.3. Size:1581K  dacosemi
dacmi150n120bzk3.pdf

DACMI240N120BZK
DACMI240N120BZK

DACMI150N120BZK3Silicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Tpy. 14 m@ VGS = 15V Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters S

 9.4. Size:396K  dacosemi
dacmi180n120bzk.pdf

DACMI240N120BZK
DACMI240N120BZK

DACMI180N120BZKSilicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Tpy.16 m@ VGS = 18V Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters Swi

 9.5. Size:782K  dacosemi
dacmi120n120bzk.pdf

DACMI240N120BZK
DACMI240N120BZK

DACMI120N120BZKSilicon Carbide Enhancement Mode MOSFETSOT-227FeaturesKSG VDSS = 1200VD RDS(ON)

 9.6. Size:383K  dacosemi
dacmi060n170bzk.pdf

DACMI240N120BZK
DACMI240N120BZK

DACMI060N170BZKDACO SEMICONDUCTOR CO., LTD. Silicon Carbide Enhancement Mode MOSFET FeaturesSG SD Appl

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DACMI240N120BZK
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