P0470ETF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P0470ETF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 54 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13.5 nS

Cossⓘ - Capacitancia de salida: 63 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm

Encapsulados: TO-220F

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P0470ETF datasheet

 ..1. Size:257K  niko-sem
p0470etf.pdf pdf_icon

P0470ETF

P0470ETF NIKO-SEM N-Channel Enhancement Mode TO-220F Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G 700V 2.8 4A 3. SOURCE S ABSOLUTE MAXIMUN RATINGS(TA=25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS 30 V TC = 25

 8.1. Size:192K  niko-sem
p0470ed.pdf pdf_icon

P0470ETF

P0470ED N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 1. GATE 700V 2.9 4A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS 30 V TC = 25

 9.1. Size:530K  unikc
p0470atf-s.pdf pdf_icon

P0470ETF

P0470ATF / P0470ATFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.8 @VGS = 10V 700V 4A TO-220F TO-220FS 100% UIS Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 700 V VGS Gate-Source Voltage 30 TC = 25 C 4 ID Continuous Drain Current2 TC = 100

 9.2. Size:323K  niko-sem
p0470jd.pdf pdf_icon

P0470ETF

N-Channel Enhancement Mode P0470JD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID 700V 1.63 4A 1. GATE 2. DRAIN G 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS 30 V TC

Otros transistores... P0165ED, P0165EI, P0260EDA, P0260EIA, P0306BT, P0406AK, P0460EDA, P0470ED, K3569, P0470JD, P0508AT, P0610BT, P0620ED, P0660ED, P0660EI, P0706BD, P0706BK