P0660EI Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P0660EI  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 33 nS

Cossⓘ - Capacitancia de salida: 101 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.35 Ohm

Encapsulados: TO-251

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P0660EI datasheet

 ..1. Size:190K  niko-sem
 p0660ei.pdf pdf_icon

P0660EI

N-Channel Enhancement Mode P0660EI NIKO-SEM TO-251 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G 600V 1.35 6A 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC = 25 C

 8.1. Size:744K  niko-sem
 p0660ed.pdf pdf_icon

P0660EI

N-Channel Enhancement Mode P0660ED NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G 600V 1.35 6A 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC = 2

 9.1. Size:626K  unikc
 p0660at.pdf pdf_icon

P0660EI

P0660AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.25 @VGS = 10V 600V 6A TO-220 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 6 ID Continuous Drain Current2 TC = 100 C 4.3 A IDM 20 Pul

 9.2. Size:630K  unikc
 p0660as.pdf pdf_icon

P0660EI

P0660AS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.25 @VGS = 10V 600V 6A TO-263 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 6 ID Continuous Drain Current2 TC = 100 C 4.3 A IDM 20 Pu

MOSTRAR MÁS

Otros transistores... P0460EDA, P0470ED, P0470ETF, P0470JD, P0508AT, P0610BT, P0620ED, P0660ED, 13N50, P0706BD, P0706BK, P0706BV, P0765JD, P0770ED, P0770JD, P0770JF, P0865ETF