P0660EI Todos los transistores

 

P0660EI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P0660EI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 101 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.35 Ohm
   Paquete / Cubierta: TO-251
 

 Búsqueda de reemplazo de P0660EI MOSFET

   - Selección ⓘ de transistores por parámetros

 

P0660EI Datasheet (PDF)

 ..1. Size:190K  niko-sem
 p0660ei.pdf pdf_icon

P0660EI

N-Channel Enhancement Mode P0660EINIKO-SEM TO-251 Field Effect Transistor Halogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G600V 1.35 6A 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 600 VGate-Source Voltage VGS 30 VTC = 25 C

 8.1. Size:744K  niko-sem
 p0660ed.pdf pdf_icon

P0660EI

N-Channel Enhancement Mode P0660ED NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G600V 1.35 6A 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC = 2

 9.1. Size:626K  unikc
 p0660at.pdf pdf_icon

P0660EI

P0660ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.25 @VGS = 10V600V 6ATO-220100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C6IDContinuous Drain Current2TC = 100 C4.3 AIDM20Pul

 9.2. Size:630K  unikc
 p0660as.pdf pdf_icon

P0660EI

P0660ASN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.25 @VGS = 10V600V 6ATO-263100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C6IDContinuous Drain Current2TC = 100 C4.3AIDM20Pu

MOSTRAR MÁS

Otros transistores... P0460EDA , P0470ED , P0470ETF , P0470JD , P0508AT , P0610BT , P0620ED , P0660ED , TK10A60D , P0706BD , P0706BK , P0706BV , P0765JD , P0770ED , P0770JD , P0770JF , P0865ETF .

History: AF10N65S | AP3700MT | HUFA75345S3S | S85N16R | APT19M120J | TPP60R350C | AP05N50EH-HF

 

 
Back to Top

 


 
.