P0903YK Datasheet. Equivalente

 ..1. Size:317K  niko-sem
 p0903yk.pdf

Dual N-Channel Enhancement Mode P0903YK NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID3 1 G1 9m Q2 30V 51A 2,3,4 D1 5,6,7 S2 16m Q1 30V 31A 8 G2 9 S1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage VDS 30 30 V

 9.1. Size:1590K  1
 ap0903q.pdf

 9.2. Size:95K  ape
 ap0903gm-hf.pdf

AP0903GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D D D Simple Drive Requirement RDS(ON) 8.5m D Fast Switching Characteristic ID 13.3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of

 9.3. Size:95K  ape
 ap0903gyt-hf.pdf

AP0903GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Good Thermal Dissipation RDS(ON) 9m Low On-resistance ID 16A G RoHS Compliant & Halogen-Free S D D D Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

 9.4. Size:168K  ape
 ap0903gm.pdf

AP0903GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D D D Simple Drive Requirement RDS(ON) 8.5m D Fast Switching Characteristic ID 13.3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP0903 series are from

 9.5. Size:111K  ape
 ap0903gyt.pdf

AP0903GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Good Thermal Dissipation RDS(ON) 9m Low On-resistance ID 16A G RoHS Compliant & Halogen-Free S D D D Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge

 9.6. Size:94K  ape
 ap0903gh-hf.pdf

AP0903GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID 51A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D

 9.7. Size:480K  unikc
 p0903bk.pdf

P0903BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 9m @VGS = 10V 30A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 30 (Package Limited) ID Continuous Drain Current2 TC = 25 C(Silicon Limited) 6

 9.8. Size:508K  unikc
 p0903bv.pdf

P0903BV N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9.65m @VGS = 10V 30V 13A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 13 ID Continuous Drain Current TA = 100 C 8 A IDM 50 Pulsed Drain Current1 IAS Avalanche Cur

 9.9. Size:455K  unikc
 p0903bdl.pdf

P0903BDL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 9.5m @VGS = 10V 56A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage 20 TC = 25 C 56 ID Continuous Drain Current TC = 100 C 35 A IDM 160 Pulsed Drain Current

 9.10. Size:371K  unikc
 p0903bt.pdf

P0903BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 9.7m @VGS = 10V 60A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 60 ID Continuous Drain Current2 TC = 100 C 38 A IDM 240 Pulsed Drain Curren

 9.11. Size:493K  unikc
 p0903bda.pdf

P0903BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 30V 56A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC= 25 C 56 ID Continuous Drain Current TC= 100 C 35 A IDM 160 Pulsed Drain Current1

 9.12. Size:475K  unikc
 p0903bva.pdf

P0903BVA N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 30V 13A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 13 ID Continuous Drain Current TA = 70 C 10 A IDM 80 Pulsed Drain Current1 IAS Avalanche Curre

 9.13. Size:521K  unikc
 p0903bd.pdf

P0903BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 30V 57A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC= 25 C 57 ID Continuous Drain Current TC= 100 C 36 A IDM 160 Pulsed Drain Current1 I

 9.14. Size:351K  unikc
 p0903bkb.pdf

P0903BKB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 9m @VGS = 10V 49A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 49 ID Continuous Drain Current2 TC = 100 C 31 IDM 120 Pulsed Drain Current1

 9.15. Size:479K  unikc
 p0903bka.pdf

P0903BKA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 30V 49A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 49 ID Continuous Drain Current3 TC = 100 C 31 IDM 120 Pulsed Drain Current

 9.16. Size:532K  unikc
 p0903bdg.pdf

P0903BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9.5m @VGS = 10V 25V 56A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage 20 TC= 25 C 56 ID Continuous Drain Current TC= 100 C 35 A IDM 160 Pulsed Drain Current1

 9.17. Size:465K  unikc
 p0903bdb.pdf

P0903BDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 30V 59A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC= 25 C 59 ID Continuous Drain Current TC= 100 C 37 A IDM 150 Pulsed Drain Current1

 9.18. Size:316K  unikc
 p0903btg.pdf

P0903BTG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 9.5m @VGS = 10V 64A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage 20 TC = 25 C 64 ID Continuous Drain Current2 TC = 100 C 40 A IDM 150 Pulsed Drain Curre

 9.19. Size:576K  unikc
 p0903bea.pdf

P0903BEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 30V 48A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 48 TC = 100 C 30 ID Continuous Drain Current2 TA = 25 C 13 A TA =

 9.20. Size:418K  unikc
 p0903bis.pdf

P0903BIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9.5 @VGS = 10V 25V 57A TO-251(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage 20 TC = 25 C 57 ID Continuous Drain Current TC = 100 C 36 A IDM 160 Pulsed Drain Curr

 9.21. Size:1734K  allpower
 ap0903gd.pdf

 9.22. Size:1590K  allpower
 ap0903q.pdf

 9.23. Size:1686K  allpower
 ap0903g.pdf