P2206HK Datasheet. Equivalente

 ..1. Size:358K  niko-sem
 p2206hk.pdf

Dual N-Channel Enhancement Mode P2206HK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D1 D1 D2 D2 V(BR)DSS RDS(ON) ID 60V 22.5m 23A G. GATE D. DRAIN S. SOURCE #1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Sourc

 9.1. Size:692K  supertex
 vp2206.pdf

Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown The Supertex VP2206 is an enhancement-mode (normally- Low power drive requirement off) transistor that utilizes a vertical DMOS structure and Supertex s well-proven silicon-gate manufacturing process. Ease of paralleling This combination produces

 9.2. Size:793K  unikc
 p2206bd.pdf

P2206BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 22.5m @VGS = 10V 60V 32A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 TC= 25 C 32 ID Continuous Drain Current TC= 100 C 20 A IDM 100 Pulsed Drain Current1

 9.3. Size:259K  niko-sem
 p2206bea.pdf

P2206BEA NIKO-SEM N-Channel Enhancement Mode PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free D D D D D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 60V 20.8m 25A G. GATE D. DRAIN #1 S S S G S. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Vo

 9.4. Size:365K  niko-sem
 p2206bd.pdf

N-Channel Enhancement Mode P2206BD NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 60V 22.5m 32A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC = 25

 9.5. Size:313K  niko-sem
 p2206bt.pdf

 9.6. Size:299K  niko-sem
 p2206btf.pdf

N-Channel Enhancement Mode P2206BTF NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G 60V 22.5m 28A 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC =

 9.7. Size:246K  niko-sem
 p2206bv.pdf

N-Channel Logic Level Enhancement Mode P2206BV NIKO-SEM Field Effect Transistor SOP-8 Halogen-free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 22.5m 60V 7A G G GATE D DRAIN S SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS