P2610BK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

N-Channel Enhancement Mode P2610BK NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free D D D DDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 26.8m 100V 25A G. GATE GD. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Sour

P2610BSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID26.8m @VGS = 10V100V 36A TO-263ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC = 25 C36IDContinuous Drain CurrentTC = 100 C23AIDM70Pulsed Drain Curr

P2610BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID26.8m @VGS = 10V100V 36ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100 VVGSGate-Source Voltage 20 VTC = 25 C36IDContinuous Drain Current2TC = 100 C23AIDM80Pulsed Drain Cur

P2610BTN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID26.8m @VGS = 10V100V 36ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC = 25 C36IDContinuous Drain CurrentTC = 100 C23AIDM70Pulsed Drain Curre

P2610BS N-Channel Enhancement Mode NIKO-SEM TO-263 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 26.8m 36A G1: GATE 2: DRAIN 3: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC

P2610BTF N-Channel Enhancement Mode NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 26.8m 24A G1: GATE 2: DRAIN 3: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V T

P2610BD N-Channel Enhancement Mode NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G100V 26.8m 36A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =

P2610BI N-Channel Enhancement Mode NIKO-SEM TO-251 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G100V 26.8m 36A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =

P2610BTwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.018 at VGS = 10 V10070aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGG D SSTop ViewN-Channel MOSFETABSOLUTE MA