P3506EK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P3506EK
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 48 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 27 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 60 nS
Cossⓘ - Capacitancia de salida: 138 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
Paquete / Cubierta: PDFN5X6P
Búsqueda de reemplazo de P3506EK MOSFET
P3506EK Datasheet (PDF)
p3506ek.pdf

P-Channel Logic Level Enhancement Mode P3506EK NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D-60V 35m -27A GFeatures Pb-Free, Halogen Free and RoHS compliant. S Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. D D D D Optimized Gate Charge to Minimize Switching
p3506ed.pdf

P-Channel Enhancement Mode P3506ED NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -60V 35m -27A G 1. GATE 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 25 V TC = 2
p3506etf.pdf

P-Channel Enhancement Mode P3506ETF NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -60V 35m -20A 1. GATE G2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 25 V TC
p3506et.pdf

P-Channel Enhancement Mode P3506ET NIKO-SEM TO-220 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D V(BR)DSS RDS(ON) ID -60V 35m -36A 1. GATE G 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 25 V TC =
Otros transistores... P2206BTF , P2206BV , P2206HK , P2610BI , P2610BK , P2610BTF , P2A06BT , P3506ED , EMB04N03H , P3506ET , P3506ETF , P3606BEA , P3606BK , P3606NEA , P3710BK , P3710BT , P3710BTF .
History: APT44F80L | IRF4104PBF | 2SK1905 | IXFH28N60P3 | H4946S | LSG70R450GT | NTB5405NG
History: APT44F80L | IRF4104PBF | 2SK1905 | IXFH28N60P3 | H4946S | LSG70R450GT | NTB5405NG



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