P5015CD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

N-Channel Enhancement Mode P5015CD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G150V 50m 23A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 12 V TC =

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP5015/DThe RF LineUHF Linear Power TransistorTP5015. . . designed for 24 Volt UHF largesignal common emitter amplifier applica-tions in industrial and commercial FM equipment operating in the 380 to512 MHz frequency range, i.e., cellular radio base stations. 380512 MHz 15 W Pout 24 V VCC 15

P5015ATF N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID150V 50m @VGS = 10V 22ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C22IDContinuous Drain Current2TC = 100 C14AIDM90Pulsed Drain Current1IASAvalanche Current 26

P5015BTFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID50m @VGS = 10V150V 18ATO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 150VVGSGate-Source Voltage 20Tc = 25 C18IDContinuous Drain CurrentTc = 100 C11AIDM80Pulsed Drain Curre

P5015BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID50m @VGS = 10V150V 24ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 150VVGSGate-Source Voltage 20TC = 25 C24IDContinuous Drain Current1TC = 100 C15AIDM90Pulsed Drain Curren