P5506NK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: P5506NK
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 6.7 nC
   trⓘ - Tiempo de subida: 48 nS
   Cossⓘ - Capacitancia de salida: 54 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: PDFN5X6P

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P5506NK Datasheet (PDF)

..1. Size:463K niko-sem
p5506nk.pdf

N- & P-Channel Enhancement Mode Field P5506NK NIKO-SEM Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free D1 D1 D2 D2PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 -60V 95m -13A G. GATE Q1 60V 55m 15A D. DRAIN S. SOURCE #1 S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage VDS

8.1. Size:729K unikc
p5506nvg.pdf

P5506NVGN- & P- Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) IDN-55m @VGS = 10V60 4.5AChannelP-80m @VGS = 10V -3.5A-60ChannelSOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)N- P-PARAMETERS/TEST CONDITIONS SYMBOL UNITSChannel ChanneVDSDrain-Source Voltage 60 -60 VVGSGate-Source Voltage 20 20 VTA = 25 C4

8.2. Size:335K niko-sem
p5506nv.pdf

N- & P-Channel Enhancement Mode Field P5506NV NIKO-SEM Effect Transistor SOP-8 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 -60V 95m -3.3A Q1 60V 55m 4A G. GATE D. DRAIN S. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage VDS -60 60 V Gate-Source Voltage V

9.1. Size:493K unikc
p5506bvg.pdf

P5506BVGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID55m @VGS =10V 60V 5.5ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20Tc = 25 C5.5IDContinuous Drain Current1Tc = 70 AC4.5IDMPulsed Drain Current 2

9.2. Size:387K unikc
p5506hvg.pdf

P5506HVGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60V 55m @VGS = 10V 4.5ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TA = 25 C4.5IDContinuous Drain CurrentTA = 70 C4AIDM25Pulsed Drain Current1

9.3. Size:478K unikc
p5506bdg.pdf

P5506BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID55m @VGS = 10V60V 22ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TC = 25 C22IDContinuous Drain CurrentTC = 100 AC18IDM80Pulsed Drain Current1

9.4. Size:215K niko-sem
p5506bda.pdf

N-Channel Enhancement Mode P5506BDA NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 55m 15A 1. GATE G2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC = 25

9.5. Size:240K niko-sem
p5506bva.pdf

N-Channel Enhancement Mode P5506BVA NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G60V 55m 4.5A G: GATE D: DRAIN S: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TA = 25

9.6. Size:259K niko-sem
p5506hva.pdf

P5506HVA Dual N-Channel Enhancement Mode NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 55m 4A G: GATE D: DRAIN S: SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TA = 25 C

9.7. Size:914K cn vbsemi
p5506hvg.pdf

P5506HVGwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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