P8010HK Datasheet. Equivalente

 ..1. Size:280K  niko-sem
 p8010hk.pdf

Dual N-Channel Enhancement Mode P8010HK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY D1 D1 D2 D2 V(BR)DSS RDS(ON) ID 100V 85m 11A G. GATE D. DRAIN S. SOURCE #1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Sourc

 9.1. Size:237K  toshiba
 tpcp8010.pdf

TPCP8010 MOSFETs Silicon N-channel MOS (U-MOS ) TPCP8010 TPCP8010 TPCP8010 TPCP8010 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers Mobile Equipment 2. Features 2. Features 2. Features 2. Features (1) Small, thin package (2) Small gate charge QSW = 4.9 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 19.1 m (typ.) (VGS = 10 V

 9.2. Size:112K  samhop
 sp8010e.pdf

Green Product SP8010E a S mHop Microelectronics C orp. Ver 1.2 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 4.3 @ VGS=10V Suface Mount Package. 24V 26A 4.9 @ VGS=6V ESD Protected. 7.0 @ VGS=4V D 5 4 G D 6 3 S 7 2 D S Pin 1 8 1 D S TSON 3.3 x 3.3

 9.3. Size:458K  unikc
 p8010bd.pdf

P8010BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 85m @VGS = 10V 100V 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 V TC = 25 C 15 ID Continuous Drain Current TC = 100 C 9 A IDM 35 Pulsed Drain Current

 9.4. Size:411K  unikc
 p8010bis.pdf

P8010BIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 85m @VGS = 10V 100V 15A 1.GATE 2.DRAIN 3.SOURCE TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC = 25 C 15 ID Continuous Drain Current TC = 100 C 9 A

 9.5. Size:422K  unikc
 p8010bv.pdf

P8010BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 85m @VGS = 10V 100V 3.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 V TA = 25 C 3.5 ID Continuous Drain Current TA = 70 C 2.8 A IDM 20 Pulsed Drain Curre

 9.6. Size:305K  niko-sem
 p8010bd.pdf

N-Channel Enhancement Mode P8010BD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 100V 85m 15A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =

 9.7. Size:303K  niko-sem
 p8010bis.pdf

N-Channel Enhancement Mode P8010BIS NIKO-SEM Field Effect Transistor TO-251(IS) Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 100V 85m 15A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V