P9006EVA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P9006EVA
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 3.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 32 nS
Cossⓘ - Capacitancia de salida: 60 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
Paquete / Cubierta: SOP-8
Búsqueda de reemplazo de P9006EVA MOSFET
P9006EVA datasheet
p9006eva.pdf
P-Channel Logic Level Enhancement Mode P9006EVA NIKO-SEM Field Effect Transistor SOP-8 Halogen-free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D 90m -3.6A -60V G GATE G D DRAIN S SOURCE 100% UIS Tested S 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Volta... See More ⇒
p9006evg.pdf
P9006EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 90m @VGS = -10V -4.5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) ( ) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage 20 TA = 25 C -4.5 ID Continuous Drain Current TA = 70 C A -3.5 IDM -20 Pulsed Drain ... See More ⇒
p9006evg.pdf
P9006EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -60V 90m @VGS = -10V -4.5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) ( ) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage 20 TA = 25 C -4.5 ID Continuous Drain Current TA = 70 C A -3.5 IDM -20 Pulsed Drain ... See More ⇒
mtp9006e3.pdf
Spec. No. C733E3 Issued Date 2010.07.09 CYStech Electronics Corp. Revised Date Page No. 1/6 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTP9006E3 ID -10A 95m Features RDSON(MAX) Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline TO-220 MTP9006E3 G Gate D Drain S Source... See More ⇒
Otros transistores... P5515BK , P5515BV , P7510ED , P7510EEU , P7510EK , P8010HK , P8806BM , P9006EDA , AO3400 , P9515BD , PA010BV , PA110BEA , PA110ED , PA110HEA , PA110NK , PA110NV , PA410BTF .
History: PA110BEA | PA110NK
Liste
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