FQP70N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FQP70N10 Datasheet (PDF)

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August 2000TMQFETQFETQFETQFETFQP70N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 57A, 100V, RDS(on) = 0.023 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC)planar stripe, DMOS technology. Low Crss ( typical 150 pF)This advanced technology has been

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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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August 2000TMQFETQFETQFETQFETFQP70N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 70A, 80V, RDS(on) = 0.017 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 75 nC)planar stripe, DMOS technology. Low Crss ( typical 180 pF)This advanced technology has been e

Otros transistores... FQP65N06 , FQP6N40C , FQU2N90 , FQP6N40CF , FQU2N50B , FQP6N80C , FQD4P25TMWS , FQP6N90C , AO4468 , FCP20N60 , FQP7N80C , FCA20N60 , FQP7P06 , FQP85N06 , FQP8N80C , FCPF11N60T , FQP8N90C .