FQP70N10 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQP70N10
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 160 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 57 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Encapsulados: TO220
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FQP70N10 datasheet
fqp70n10.pdf
August 2000 TM QFET QFET QFET QFET FQP70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 57A, 100V, RDS(on) = 0.023 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 150 pF) This advanced technology has been
fqp70n10.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fqp70n08.pdf
August 2000 TM QFET QFET QFET QFET FQP70N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 70A, 80V, RDS(on) = 0.017 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 75 nC) planar stripe, DMOS technology. Low Crss ( typical 180 pF) This advanced technology has been e
Otros transistores... FQP65N06, FQP6N40C, FQU2N90, FQP6N40CF, FQU2N50B, FQP6N80C, FQD4P25TMWS, FQP6N90C, 60N06, FCP20N60, FQP7N80C, FCA20N60, FQP7P06, FQP85N06, FQP8N80C, FCPF11N60T, FQP8N90C
History: IPB80N04S2L-03 | IPB80N04S2-H4
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