FCP20N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCP20N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 208 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de FCP20N60 MOSFET
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FCP20N60 datasheet
fcp20n60 fcpf20n60.pdf
August 2014 FCP20N60 / FCPF20N60 N-Channel SuperFET MOSFET 600 V, 20 A, 190 m Features Description SuperFET MOSFET is Fairchild Semiconductor s first genera- 650V @ TJ = 150 C tion of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 150 m utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 75 nC ) r
fcp20n60fs fcp20n60 fcpf20n60.pdf
December 2008 TM SuperFET FCP20N60 / FCPF20N60 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.15 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 75nC) lower gate charge perfo
fcp20n60 fcpf20n60.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... FQP6N40C, FQU2N90, FQP6N40CF, FQU2N50B, FQP6N80C, FQD4P25TMWS, FQP6N90C, FQP70N10, IRFP064N, FQP7N80C, FCA20N60, FQP7P06, FQP85N06, FQP8N80C, FCPF11N60T, FQP8N90C, FQP8P10
History: DMG9926USD | IRL520N
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