PP1410AEA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PP1410AEA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 57 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 42 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 23 nS
Cossⓘ - Capacitancia de salida: 278 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
Paquete / Cubierta: PDFN3X3P
Búsqueda de reemplazo de PP1410AEA MOSFET
PP1410AEA Datasheet (PDF)
pp1410aea.pdf
PP1410AEA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D100V 14m 42A D D D DG. GATE D. DRAIN GS. SOURCE 100% UIS Tested #1 S S S GS100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Sou
pp1410ak.pdf
N-Channel Enhancement Mode PP1410AK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D D D D D100V 14m 49A MSL (Moisture Sensitivity Level) 1. GG. GATE D. DRAIN #1 S S S GS. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Sou
pp1410af.pdf
N-Channel Enhancement Mode PP1410AF NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 14m 34A 1. GATE 2. DRAIN S3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =
pp1410ad.pdf
N-Channel Enhancement Mode PP1410AD NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G1.GATE 100V 14m 45A 2.DRAIN 3.SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC = 25
Otros transistores... PM5C3BA , PM5D8EA , PM5H7EA , PM5Q2EA , PM5Q4BA , PM5T4EA , PM5W6EA , PP1410AD , IRFB31N20D , PP1410AF , PP1410AK , PP1515AD , PP1515AF , PP1515AK , PP1C06AKB , PP2915AD , PP2915AK .
History: NCE30H14K | IPI65R280E6
History: NCE30H14K | IPI65R280E6
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