PP1410AK MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PP1410AK

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 78 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 49 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 269 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: PDFN5X6P

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PP1410AK datasheet

 ..1. Size:371K  niko-sem
 pp1410ak.pdf pdf_icon

PP1410AK

N-Channel Enhancement Mode PP1410AK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D D D D D 100V 14m 49A MSL (Moisture Sensitivity Level) 1. G G. GATE D. DRAIN #1 S S S G S. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Sou

 7.1. Size:396K  niko-sem
 pp1410aea.pdf pdf_icon

PP1410AK

PP1410AEA N-Channel Enhancement Mode NIKO-SEM PDFN 3x3P Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D 100V 14m 42A D D D D G. GATE D. DRAIN G S. SOURCE 100% UIS Tested #1 S S S G S 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Sou

 7.2. Size:325K  niko-sem
 pp1410af.pdf pdf_icon

PP1410AK

N-Channel Enhancement Mode PP1410AF NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 100V 14m 34A 1. GATE 2. DRAIN S 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC =

 7.3. Size:311K  niko-sem
 pp1410ad.pdf pdf_icon

PP1410AK

N-Channel Enhancement Mode PP1410AD NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 1.GATE 100V 14m 45A 2.DRAIN 3.SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC = 25

MOSTRAR MÁS

Otros transistores... PM5H7EA, PM5Q2EA, PM5Q4BA, PM5T4EA, PM5W6EA, PP1410AD, PP1410AEA, PP1410AF, IRF1405, PP1515AD, PP1515AF, PP1515AK, PP1C06AKB, PP2915AD, PP2915AK, PP2G10AS, PP2G10AT