2SK3152 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK3152 Silicon N Channel MOS FET High Speed Power Switching REJ03G1077-0200 (Previous: ADE-208-732) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS =100 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)DG1. Gate2. Drain3. Source1S23

isc N-Channel MOSFET Transistor 2SK3152FEATURES Drain-source on-resistance:RDS(on) 130m@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh fast switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 120 V

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Ordering number:EN1005BN-Channel Junction Silicon FET2SK315FM Tuner ApplicationsFeatures Package Dimensions Ideal for FM tuners in radios, stereos, etc.unit:mm Because it is compactly packaged, sets can be made2040Acompact.[2SK315] Small Crss (Crss=0.08pF typ). 2.24.0 High yfs (yfs=12.0ms typ).0.40.50.40.41 2 31 : Drain1.3 1.32 : Source3 :

2SK3156 Silicon N Channel MOS FET High Speed Power Switching REJ03G1081-0301 (Previous: ADE-208-683A) Rev.3.01 Apr 27, 2006 Features Low on-resistance RDS =50 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. GateG2. Drain(Flange)3. Source1

2SK3155 Silicon N Channel MOS FET High Speed Power Switching REJ03G1080-0500 (Previous: ADE-208-768C) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS = 100 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)DG1. Gate2. Drain3. Source1S2

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK3159 Silicon N Channel MOS FET High Speed Power Switching REJ03G1084-0400 Rev.4.00 May 15, 2006 Features Low on-resistance RDS = 23 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D1. Gate2. DrainG(Flange)3. Source12S3Rev.4.00 May 15, 2

2SK3158 Silicon N Channel MOS FET High Speed Power Switching REJ03G1083-0400 (Previous: ADE-208-757B) Target Specification Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS = 40 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. GateG2. Drain

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK3151 Silicon N Channel MOS FET High Speed Power Switching REJ03G1076-0400 (Previous: ADE-208-747B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS (on) = 11.5 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D1. GateG2. Drain(Flange)3. Sour

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK3153 Silicon N Channel MOS FET High Speed Power Switching REJ03G1078-0300 (Previous: ADE-208-733A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =65 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)DG1. Gate2. Drain3. Source1S23

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK3157 Silicon N Channel MOS FET High Speed Power Switching REJ03G1082-0300 (Previous: ADE-208-769A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS = 50 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)DG1. Gate2. Drain3. Source1S23

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK3150(L), 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1075-0400 (Previous: ADE-208-750B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =45 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(L)

2SK3154 Silicon N Channel MOS FET High Speed Power Switching REJ03G1079-0300 (Previous: ADE-208-682A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =100 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. GateG2. Drain(Flange)3. Source

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

isc N-Channel MOSFET Transistor 2SK3156FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V =150V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3155FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V =150V(Min)DSSStatic Drain-Source On-Resistance: R = 0.13(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3150LFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max)@VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3159FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3158FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V =150V(Min)DSSStatic Drain-Source On-Resistance: R = 45m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3151FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 15m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3150SFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max)@VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3153FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V =120V(Min)DSSStatic Drain-Source On-Resistance: R = 85m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3157FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V =150V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3154FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V =150V(Min)DSSStatic Drain-Source On-Resistance: R = 0.13(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid