PP4B10BD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PP4B10BD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 127 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 63 nS
Cossⓘ - Capacitancia de salida: 765 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0056 Ohm
Paquete / Cubierta: TO-252
PP4B10BD Datasheet (PDF)
pp4b10bd.pdf

N-Channel Logic Level Enhancement PP4B10BD NIKO-SEM Mode Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.GATE 4.2m 100V 127A G 2.DRAIN 3.SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 127 Continuous
pp4b10bs.pdf

N-Channel Logic Level Enhancement PP4B10BS NIKO-SEM Mode Field Effect Transistor TO-263 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.GATE 4.2m 100V 134A G 2.DRAIN 3.SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TC = 25 C 134 Continuous
pp4b10bk.pdf

N-Channel Enhancement Mode PP4B10BK NIKO-SEM PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 4.2m 127A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source V
pp4b10bf.pdf

N-Channel Enhancement Mode PP4B10BF NIKO-SEM TO-220F Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G100V 4.4m 78A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V TC = 25
Otros transistores... PP4515BD , PP4515BK , PP4515BL , PP4B10AD , PP4B10AF , PP4B10AK , PP4B10AS , PP4B10AT , IRF3205 , PP4B10BF , PP4B10BK , PP4B10BS , PP9C15AD , PP9C15AF , PP9C15AK , PP9C15AT , PP9H06BD .



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMTQ11DN10A | JMTQ100P03A | JMTQ100N04A | JMTQ100N03D | JMTQ100N03A | JMTK90N02A | JMTK80N06A | JMTK75N02A | JMTK70N07A | JMTK60N04B | JMTK58N06B | JMTK50P03A | JMTK50P02A | JMTK50N06B | JMTK50N03A | JMTK500N10A
Popular searches
bc108b | oc84 | c6090 | ksa1015yta | 2n4240 | 2n5210 transistor | toshiba 2sc2290 | pk6d0ba mosfet