PP9C15AK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PP9C15AK
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 83 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 71 nS
Cossⓘ - Capacitancia de salida: 304 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0093 Ohm
Paquete / Cubierta: PDFN5X6P
Búsqueda de reemplazo de MOSFET PP9C15AK
PP9C15AK Datasheet (PDF)
pp9c15ak.pdf
N-Channel Enhancement Mode PP9C15AK NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G150V 9.3m 83A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source
pp9c15af.pdf
N-Channel Enhancement Mode PP9C15AF NIKO-SEM Field Effect Transistor TO-220F Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 1. GATE 150V 9.3m 50A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 20 V TC =
pp9c15at.pdf
N-Channel Enhancement Mode PP9C15AT NIKO-SEM Field Effect Transistor TO-220 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 1. GATE 150V 9.3m 89A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 20 V TC =
pp9c15ad.pdf
N-Channel Enhancement Mode PP9C15AD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 1. GATE 150V 9.3m 70A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 20 V TC =
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918