SJMN030R60SCW
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SJMN030R60SCW
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 568
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 600
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30
V
|Id|ⓘ - Corriente continua de drenaje: 75
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30
nS
Cossⓘ - Capacitancia
de salida: 195
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03
Ohm
Paquete / Cubierta:
TO-247
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SJMN030R60SCW
Datasheet (PDF)
..1. Size:638K auk
sjmn030r60scw.pdf 
SJMN030R60SCW N-Channel Super Junction MOSFET SWITCHING REGULATOR APPLICATION Features 75A, 600V Super-junction MOSFET Ultra fast recovery body diode Low drain-source On-resistance: R =24m (Typ.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247-3L SJMN030R60SCW N030R60SC TO-247-3L
9.1. Size:701K auk
sjmn041r65sw.pdf
SJMN041R65SW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 650V Super-junction MOSFET Ultra fast body diode: trr=185ns(typ.) Low drain-source On-resistance: R =0.041 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN041R65SW N041R65S TO-247 Mark
9.2. Size:666K auk
sjmn070r60sw.pdf
SJMN070R60SW Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =650V (@T =150C) DS J Low drain-source On resistance: R =0.07 (Max.) DS(on) Ultra low gate charge and ultra fast body diode RoHS compliant device and Halogen-free device 100% avalanche tested Ordering Information G D S Part Number Marking Package
9.3. Size:664K auk
sjmn099r60zsw.pdf
SJMN099R60ZSW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 600V Super-junction MOSFET Ultra fast body diode and Built-in ESD diode Low drain-source On-resistance: R =0.099 (Max.) DS(on) 100% avalanche tested RoHS compliant device and Halogen-free device Ordering Information G D S Part Number Marking Package TO-247-3L S
9.4. Size:669K auk
sjmn099rh65sw.pdf
SJMN099RH65SW N-Channel Super Junction MOSFET N-Channel Super Junction MOSFET Features 650V Super-junction MOSFET Ultra fast body diode: trr=202ns(typ.) Low drain-source On-resistance: R =0.099 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247-3L SJMN099RH65SW N099RH65S TO-247
9.5. Size:702K auk
sjmn065r65w.pdf
SJMN065R65W N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 650V Super-junction MOSFET Low FOM R * Q DS(on) g Low drain-source On-resistance: R =0.065 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN065R65W N065R65 TO-247 Marking Information
9.6. Size:782K auk
sjmn088r65f.pdf
SJMN088R65F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.088 (Max.) DS(on) Ultra low gate charge: Qg=76nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN088R65F N088R65 T
9.7. Size:719K auk
sjmn074rh65sw.pdf
SJMN074RH65SW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 650V Super-junction MOSFET Ultra fast body diode: trr=140ns(typ.) Low drain-source On-resistance: R =0.074 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN074RH65SW N074RH65 TO-247 Ma
9.8. Size:719K auk
sjmn074r65sw.pdf
SJMN074R65SW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 650V Super-junction MOSFET Ultra fast body diode: trr=140ns(typ.) Low drain-source On-resistance: R =0.074 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN074R65SW N074R65 TO-247 Marki
9.9. Size:785K auk
sjmn088r65fd.pdf
SJMN088R65FD Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.088 (Max.) DS(on) Ultra low gate charge: Qg=76nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SJMN088R65FD N088R65
9.10. Size:719K auk
sjmn041rh65sw.pdf
SJMN041RH65SW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 650V Super-junction MOSFET Ultra fast body diode: trr=185ns(typ.) Low drain-source On-resistance: R =0.041 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN041RH65SW N041RH65S TO-247 M
9.11. Size:676K auk
sjmn099r65sw.pdf
SJMN099R65SW N-Channel Super Junction MOSFET N-Channel Super Junction MOSFET Features 650V Super-junction MOSFET Ultra fast body diode: trr=202ns(typ.) Low drain-source On-resistance: R =0.099 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN099R65SW N099R65S TO-247 Mark
9.12. Size:697K auk
sjmn088r65w.pdf
SJMN088R65W Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.088 (Max.) DS(on) Ultra low gate charge: Qg=76nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-247 Part Number Marking Package SJMN088R65W N088R65 TO-24
Otros transistores... PZ5D8JZ
, PZ5G7EA
, PZ5S6EA
, PZ5S6JZ
, PZ607UZ
, PZC010BL
, PZC010HK
, PZF010HK
, IRFZ24N
, SJMN041R65SW
, SJMN041RH65SW
, SJMN065R65W
, SJMN070R60SW
, SJMN074R65SW
, SJMN074RH65SW
, SJMN088R65F
, SJMN088R65FD
.
History: IRFR210
