SJMN041R65SW Todos los transistores

 

SJMN041R65SW MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SJMN041R65SW
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 446 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.041 Ohm
   Paquete / Cubierta: TO-247
 

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SJMN041R65SW Datasheet (PDF)

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SJMN041R65SW

SJMN041R65SW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 650V Super-junction MOSFET Ultra fast body diode: trr=185ns(typ.) Low drain-source On-resistance: R =0.041 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN041R65SW N041R65S TO-247 Mark

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SJMN041R65SW

SJMN041RH65SW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 650V Super-junction MOSFET Ultra fast body diode: trr=185ns(typ.) Low drain-source On-resistance: R =0.041 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN041RH65SW N041RH65S TO-247 M

 9.1. Size:666K  auk
 sjmn070r60sw.pdf pdf_icon

SJMN041R65SW

SJMN070R60SW Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =650V (@T =150C) DS J Low drain-source On resistance: R =0.07 (Max.) DS(on) Ultra low gate charge and ultra fast body diode RoHS compliant device and Halogen-free device 100% avalanche tested Ordering Information G D S Part Number Marking Package

 9.2. Size:664K  auk
 sjmn099r60zsw.pdf pdf_icon

SJMN041R65SW

SJMN099R60ZSW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 600V Super-junction MOSFET Ultra fast body diode and Built-in ESD diode Low drain-source On-resistance: R =0.099 (Max.) DS(on) 100% avalanche tested RoHS compliant device and Halogen-free device Ordering Information G D S Part Number Marking Package TO-247-3L S

MOSTRAR MÁS

Otros transistores... PZ5G7EA , PZ5S6EA , PZ5S6JZ , PZ607UZ , PZC010BL , PZC010HK , PZF010HK , SJMN030R60SCW , P60NF06 , SJMN041RH65SW , SJMN065R65W , SJMN070R60SW , SJMN074R65SW , SJMN074RH65SW , SJMN088R65F , SJMN088R65FD , SJMN088R65W .

History: SFS04R02DF | SIS778DN | SI5479DU | FQPF18N50V2 | KU082N03Q | NCE0110AK | NVATS4A103PZ

 

 
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