SJMN041R65SW MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SJMN041R65SW
   Código: N041R65S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 446 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 164 nC
   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.041 Ohm
   Paquete / Cubierta: TO-247

Búsqueda de reemplazo de MOSFET SJMN041R65SW

SJMN041R65SW Datasheet (PDF)

..1. Size:701K auk
sjmn041r65sw.pdf

SJMN041R65SW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 650V Super-junction MOSFET Ultra fast body diode: trr=185ns(typ.) Low drain-source On-resistance: R =0.041 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN041R65SW N041R65S TO-247 Mark

6.1. Size:719K auk
sjmn041rh65sw.pdf

SJMN041RH65SW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 650V Super-junction MOSFET Ultra fast body diode: trr=185ns(typ.) Low drain-source On-resistance: R =0.041 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN041RH65SW N041RH65S TO-247 M

9.1. Size:666K auk
sjmn070r60sw.pdf

SJMN070R60SW Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =650V (@T =150C) DS J Low drain-source On resistance: R =0.07 (Max.) DS(on) Ultra low gate charge and ultra fast body diode RoHS compliant device and Halogen-free device 100% avalanche tested Ordering Information G D S Part Number Marking Package

9.2. Size:664K auk
sjmn099r60zsw.pdf

SJMN099R60ZSW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 600V Super-junction MOSFET Ultra fast body diode and Built-in ESD diode Low drain-source On-resistance: R =0.099 (Max.) DS(on) 100% avalanche tested RoHS compliant device and Halogen-free device Ordering Information G D S Part Number Marking Package TO-247-3L S

9.3. Size:669K auk
sjmn099rh65sw.pdf

SJMN099RH65SW N-Channel Super Junction MOSFET N-Channel Super Junction MOSFET Features 650V Super-junction MOSFET Ultra fast body diode: trr=202ns(typ.) Low drain-source On-resistance: R =0.099 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247-3L SJMN099RH65SW N099RH65S TO-247

9.4. Size:702K auk
sjmn065r65w.pdf

SJMN065R65W N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 650V Super-junction MOSFET Low FOM R * Q DS(on) g Low drain-source On-resistance: R =0.065 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN065R65W N065R65 TO-247 Marking Information

9.5. Size:782K auk
sjmn088r65f.pdf

SJMN088R65F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.088 (Max.) DS(on) Ultra low gate charge: Qg=76nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN088R65F N088R65 T

9.6. Size:719K auk
sjmn074rh65sw.pdf

SJMN074RH65SW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 650V Super-junction MOSFET Ultra fast body diode: trr=140ns(typ.) Low drain-source On-resistance: R =0.074 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN074RH65SW N074RH65 TO-247 Ma

9.7. Size:719K auk
sjmn074r65sw.pdf

SJMN074R65SW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 650V Super-junction MOSFET Ultra fast body diode: trr=140ns(typ.) Low drain-source On-resistance: R =0.074 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN074R65SW N074R65 TO-247 Marki

9.8. Size:785K auk
sjmn088r65fd.pdf

SJMN088R65FD Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.088 (Max.) DS(on) Ultra low gate charge: Qg=76nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SJMN088R65FD N088R65

9.9. Size:676K auk
sjmn099r65sw.pdf

SJMN099R65SW N-Channel Super Junction MOSFET N-Channel Super Junction MOSFET Features 650V Super-junction MOSFET Ultra fast body diode: trr=202ns(typ.) Low drain-source On-resistance: R =0.099 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN099R65SW N099R65S TO-247 Mark

9.10. Size:638K auk
sjmn030r60scw.pdf

SJMN030R60SCW N-Channel Super Junction MOSFET SWITCHING REGULATOR APPLICATION Features 75A, 600V Super-junction MOSFET Ultra fast recovery body diode Low drain-source On-resistance: R =24m (Typ.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247-3L SJMN030R60SCW N030R60SC TO-247-3L

9.11. Size:697K auk
sjmn088r65w.pdf

SJMN088R65W Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.088 (Max.) DS(on) Ultra low gate charge: Qg=76nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-247 Part Number Marking Package SJMN088R65W N088R65 TO-24

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