FQP9N30 Todos los transistores

 

FQP9N30 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQP9N30
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 98 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

FQP9N30 Datasheet (PDF)

 ..1. Size:637K  fairchild semi
 fqp9n30.pdf pdf_icon

FQP9N30

May 2000TMQFETQFETQFETQFETFQP9N30300V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 300V, RDS(on) = 0.45 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 17 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been espe

 9.1. Size:1341K  fairchild semi
 fqp9n50c.pdf pdf_icon

FQP9N30

April 2014FQP9N50CN-Channel QFET MOSFET500 V, 9 A, 800 m DescriptionFeaturesThese N-Channel enhancement mode power field effect 9 A, 500 V, RDS(on) = 800 m (Max.) @ VGS = 10 V,transistors are produced using Fairchild s proprietary, ID = 4.5 Aplanar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC)technology has been especially tailored to minim

 9.2. Size:757K  fairchild semi
 fqp9n15.pdf pdf_icon

FQP9N30

May 2000TMQFETQFETQFETQFET 150V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 150V, RDS(on) = 0.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been espe

 9.3. Size:540K  fairchild semi
 fqp9n08l.pdf pdf_icon

FQP9N30

December 2000TMQFETQFETQFETQFETFQP9N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.3A, 80V, RDS(on) = 0.21 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.7 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology is

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PE506BA | STD5N52K3 | KF5N53D | SVS11N65FD2 | CSD19536KCS | ASDM3400

 

 
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