SJMN074R65SW Todos los transistores

 

SJMN074R65SW MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SJMN074R65SW
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 51 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 120 nS
   Cossⓘ - Capacitancia de salida: 147 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.074 Ohm
   Paquete / Cubierta: TO-247
 

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SJMN074R65SW Datasheet (PDF)

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SJMN074R65SW

SJMN074R65SW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 650V Super-junction MOSFET Ultra fast body diode: trr=140ns(typ.) Low drain-source On-resistance: R =0.074 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN074R65SW N074R65 TO-247 Marki

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SJMN074R65SW

SJMN074RH65SW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 650V Super-junction MOSFET Ultra fast body diode: trr=140ns(typ.) Low drain-source On-resistance: R =0.074 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN074RH65SW N074RH65 TO-247 Ma

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 sjmn070r60sw.pdf pdf_icon

SJMN074R65SW

SJMN070R60SW Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =650V (@T =150C) DS J Low drain-source On resistance: R =0.07 (Max.) DS(on) Ultra low gate charge and ultra fast body diode RoHS compliant device and Halogen-free device 100% avalanche tested Ordering Information G D S Part Number Marking Package

 9.1. Size:701K  auk
 sjmn041r65sw.pdf pdf_icon

SJMN074R65SW

SJMN041R65SW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 650V Super-junction MOSFET Ultra fast body diode: trr=185ns(typ.) Low drain-source On-resistance: R =0.041 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN041R65SW N041R65S TO-247 Mark

MOSTRAR MÁS

Otros transistores... PZC010BL , PZC010HK , PZF010HK , SJMN030R60SCW , SJMN041R65SW , SJMN041RH65SW , SJMN065R65W , SJMN070R60SW , P0903BDG , SJMN074RH65SW , SJMN088R65F , SJMN088R65FD , SJMN088R65W , SJMN099R60ZSW , SJMN099R65SW , SJMN099RH65SW , SJMN165R65ZF .

History: RF1S70N03SM | MTBA5C10AQ8 | WSF12N10 | IRFR214 | MTDA0P10FP | MTBA5N10FP | HSBA6115

 

 
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