SJMN088R65F Todos los transistores

 

SJMN088R65F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SJMN088R65F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 85 nS
   Cossⓘ - Capacitancia de salida: 256 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.088 Ohm
   Paquete / Cubierta: TO-220F
 

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SJMN088R65F Datasheet (PDF)

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SJMN088R65F

SJMN088R65F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.088 (Max.) DS(on) Ultra low gate charge: Qg=76nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN088R65F N088R65 T

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 sjmn088r65fd.pdf pdf_icon

SJMN088R65F

SJMN088R65FD Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.088 (Max.) DS(on) Ultra low gate charge: Qg=76nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SJMN088R65FD N088R65

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 sjmn088r65w.pdf pdf_icon

SJMN088R65F

SJMN088R65W Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.088 (Max.) DS(on) Ultra low gate charge: Qg=76nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-247 Part Number Marking Package SJMN088R65W N088R65 TO-24

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 sjmn041r65sw.pdf pdf_icon

SJMN088R65F

SJMN041R65SW N-Channel Super-junction MOSFET SWITCHING REGULATOR APPLICATION Features 650V Super-junction MOSFET Ultra fast body diode: trr=185ns(typ.) Low drain-source On-resistance: R =0.041 (Max.) DS(on) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-247 SJMN041R65SW N041R65S TO-247 Mark

MOSTRAR MÁS

Otros transistores... PZF010HK , SJMN030R60SCW , SJMN041R65SW , SJMN041RH65SW , SJMN065R65W , SJMN070R60SW , SJMN074R65SW , SJMN074RH65SW , 10N65 , SJMN088R65FD , SJMN088R65W , SJMN099R60ZSW , SJMN099R65SW , SJMN099RH65SW , SJMN165R65ZF , SJMN180R65CB , SJMN180R65CF .

History: 1N65G-TM3-T | IPD50R1K4CE | NCE60P18AK | APL602J | SJMN074RH65SW | IXTH33N45 | IXTP4N60P

 

 
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