SJMN180R65CB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SJMN180R65CB
   Código: SJMN180R65C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 32 nC
   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 1203 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: TO-263

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SJMN180R65CB Datasheet (PDF)

..1. Size:604K auk
sjmn180r65cb.pdf

SJMN180R65CB Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.18 (Max.) D DS(on) Ultra low gate charge: Qg=32nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G S Ordering Information TO-263 (D2-PAK) Part Number Marking Package

3.1. Size:587K auk
sjmn180r65cf.pdf

SJMN180R65CF Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.18 (Max.) DS(on) Ultra low gate charge: Qg=32nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN1

9.1. Size:679K auk
sjmn1k2r80zd.pdf

SJMN1K2R80ZD Super Junction MOSFET 800V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) gD Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G S Ordering Information TO-252 Part Number Marking Package SJMN1K2R80ZD SJMN1K2R80Z TO-252 Marking Information Column 1, 2

9.2. Size:764K auk
sjmn190r65w.pdf

SJMN190R65W Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.19 (Max.) DS(on) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-247 SJMN190R65W N190R65 TO-247

9.3. Size:708K auk
sjmn1k6r70d.pdf

SJMN1K6R70D Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS JD Low drain-source On resistance: R =1.6 (Max.) DS(on) Ultra low gate charge: Qg=5.5nC(Typ.) RoHS compliant device ESD improved capability G Ordering Information S Part Number Marking Package TO-252 SJMN1R6R70D SJMN1K6R70

9.4. Size:818K auk
sjmn190r60f.pdf

SJMN190R60F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =650V (@T =150C) DS J Low drain-source On resistance: R =0.19 (Max.) DS(on) Ultra low gate charge: Qg=36nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN190R60F N190R60 TO

9.5. Size:637K auk
sjmn190r65f.pdf

SJMN190R65FSuper Junction MOSFETN-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.19 (Max.) DS(on) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SJMN190R65F N190R65 TO-2

9.6. Size:579K auk
sjmn190r65b.pdf

SJMN190R65B Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.19 (Max.) DS(on)D Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G S Part Number Marking Package TO-263 (D2-PAK) SJMN190R65B N

9.7. Size:679K auk
sjmn1k4r90zd.pdf

SJMN1K4R90ZD Super Junction MOSFET 900V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) gD Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G S Ordering Information TO-252 Part Number Marking Package SJMN1K4R90ZD SJMN1K4R90Z TO-252 Marking Information Column 1,

9.8. Size:633K auk
sjmn165r65zf.pdf

SJMN165R65ZF Super Junction MOSFET 650V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN165R65ZF N165R65Z TO-220F-3L Marking Information Column 1:

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