SJMN190R65W MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SJMN190R65W

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 846 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm

Encapsulados: TO-247

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SJMN190R65W datasheet

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 sjmn190r65w.pdf pdf_icon

SJMN190R65W

SJMN190R65W Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =700V (@T =150 C) DS J Low drain-source On resistance R =0.19 (Max.) DS(on) Ultra low gate charge Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-247 SJMN190R65W N190R65 TO-247

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 sjmn190r65f.pdf pdf_icon

SJMN190R65W

SJMN190R65F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =700V (@T =150 C) DS J Low drain-source On resistance R =0.19 (Max.) DS(on) Ultra low gate charge Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SJMN190R65F N190R65 TO-2

 4.2. Size:579K  auk
 sjmn190r65b.pdf pdf_icon

SJMN190R65W

SJMN190R65B Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =700V (@T =150 C) DS J Low drain-source On resistance R =0.19 (Max.) DS(on) D Ultra low gate charge Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G S Part Number Marking Package TO-263 (D2-PAK) SJMN190R65B N

 5.1. Size:818K  auk
 sjmn190r60f.pdf pdf_icon

SJMN190R65W

SJMN190R60F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =650V (@T =150 C) DS J Low drain-source On resistance R =0.19 (Max.) DS(on) Ultra low gate charge Qg=36nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN190R60F N190R60 TO

MOSTRAR MÁS

Otros transistores... SJMN099R65SW, SJMN099RH65SW, SJMN165R65ZF, SJMN180R65CB, SJMN180R65CF, SJMN190R60F, SJMN190R65B, SJMN190R65F, 8N60, SJMN1K2R80ZD, SJMN1K4R90ZD, SJMN1K6R70D, SJMN230R70ZF, SJMN250R80ZB, SJMN250R80ZF, SJMN250R80ZP, SJMN250R80ZW