SJMN190R65W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SJMN190R65W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 846 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO-247

Búsqueda de reemplazo de MOSFET SJMN190R65W

SJMN190R65W Datasheet (PDF)

..1. Size:764K auk
sjmn190r65w.pdf

SJMN190R65W Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.19 (Max.) DS(on) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-247 SJMN190R65W N190R65 TO-247

4.1. Size:637K auk
sjmn190r65f.pdf

SJMN190R65FSuper Junction MOSFETN-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.19 (Max.) DS(on) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SJMN190R65F N190R65 TO-2

4.2. Size:579K auk
sjmn190r65b.pdf

SJMN190R65B Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.19 (Max.) DS(on)D Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G S Part Number Marking Package TO-263 (D2-PAK) SJMN190R65B N

5.1. Size:818K auk
sjmn190r60f.pdf

SJMN190R60F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =650V (@T =150C) DS J Low drain-source On resistance: R =0.19 (Max.) DS(on) Ultra low gate charge: Qg=36nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN190R60F N190R60 TO

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: WPT2N31

Liste

Recientemente añadidas las descripciónes de los transistores: