SJMN1K2R80ZD Todos los transistores

 ..1. Size:679K  auk
 sjmn1k2r80zd.pdf

SJMN1K2R80ZD Super Junction MOSFET 800V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g D Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G S Ordering Information TO-252 Part Number Marking Package SJMN1K2R80ZD SJMN1K2R80Z TO-252 Marking Information Column 1, 2

 8.1. Size:708K  auk
 sjmn1k6r70d.pdf

SJMN1K6R70D Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =750V (@T =150 C) DS J D Low drain-source On resistance R =1.6 (Max.) DS(on) Ultra low gate charge Qg=5.5nC(Typ.) RoHS compliant device ESD improved capability G Ordering Information S Part Number Marking Package TO-252 SJMN1R6R70D SJMN1K6R70

 8.2. Size:679K  auk
 sjmn1k4r90zd.pdf

SJMN1K4R90ZD Super Junction MOSFET 900V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g D Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G S Ordering Information TO-252 Part Number Marking Package SJMN1K4R90ZD SJMN1K4R90Z TO-252 Marking Information Column 1,

 9.1. Size:604K  auk
 sjmn180r65cb.pdf

SJMN180R65CB Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =700V (@T =150 C) DS J Low drain-source On resistance R =0.18 (Max.) D DS(on) Ultra low gate charge Qg=32nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G S Ordering Information TO-263 (D2-PAK) Part Number Marking Package

 9.2. Size:764K  auk
 sjmn190r65w.pdf

SJMN190R65W Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =700V (@T =150 C) DS J Low drain-source On resistance R =0.19 (Max.) DS(on) Ultra low gate charge Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-247 SJMN190R65W N190R65 TO-247

 9.3. Size:818K  auk
 sjmn190r60f.pdf

SJMN190R60F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =650V (@T =150 C) DS J Low drain-source On resistance R =0.19 (Max.) DS(on) Ultra low gate charge Qg=36nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN190R60F N190R60 TO

 9.4. Size:637K  auk
 sjmn190r65f.pdf

SJMN190R65F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =700V (@T =150 C) DS J Low drain-source On resistance R =0.19 (Max.) DS(on) Ultra low gate charge Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SJMN190R65F N190R65 TO-2

 9.5. Size:587K  auk
 sjmn180r65cf.pdf

SJMN180R65CF Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =700V (@T =150 C) DS J Low drain-source On resistance R =0.18 (Max.) DS(on) Ultra low gate charge Qg=32nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN1

 9.6. Size:579K  auk
 sjmn190r65b.pdf

SJMN190R65B Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage V =700V (@T =150 C) DS J Low drain-source On resistance R =0.19 (Max.) DS(on) D Ultra low gate charge Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G S Part Number Marking Package TO-263 (D2-PAK) SJMN190R65B N

 9.7. Size:633K  auk
 sjmn165r65zf.pdf

SJMN165R65ZF Super Junction MOSFET 650V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Excellent stability and uniformity 100% avalanche tested Built-in ESD Diode G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN165R65ZF N165R65Z TO-220F-3L Marking Information Column 1