SJMN380R65F Todos los transistores

 

SJMN380R65F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SJMN380R65F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 431 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: TO-220F

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SJMN380R65F Datasheet (PDF)

 ..1. Size:781K  auk
sjmn380r65f.pdf

SJMN380R65F
SJMN380R65F

SJMN380R65F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.38 (Max.) DS(on) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN380R65F N380R65 TO

 4.1. Size:662K  auk
sjmn380r65b.pdf

SJMN380R65F
SJMN380R65F

SJMN380R65B Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS JD Low drain-source On resistance: R =0.38 (Max.) DS(on) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information Part Number Marking Package TO-263 (D2-PAK) SJMN380R65B SJM

 4.2. Size:846K  auk
sjmn380r65mf.pdf

SJMN380R65F
SJMN380R65F

SJMN380R65MF Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.38 (Max.) DS(on) Ultra low gate charge: Qg=27nC(Typ.) RoHS compliant device and Halogen-free device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package

 4.3. Size:716K  auk
sjmn380r65cd.pdf

SJMN380R65F
SJMN380R65F

SJMN380R65CD Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.38 (Max.) D DS(on) Ultra low gate charge: Qg=17.5nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252 SJMN38

 4.4. Size:726K  auk
sjmn380r65d.pdf

SJMN380R65F
SJMN380R65F

SJMN380R65D Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS JD Low drain-source On resistance: R =0.38 (Max.) DS(on) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information TO-252 Part Number Marking Package SJMN380R65D SJMN380R65

 4.5. Size:631K  auk
sjmn380r65zf.pdf

SJMN380R65F
SJMN380R65F

SJMN380R65ZF Super Junction MOSFET 650V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Built-in ESD Diode 100% avalanche tested Halogen free and RoHS compliant device G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN380R65ZF N380R65Z TO-220F-3L Marking Information Colum

 4.6. Size:792K  auk
sjmn380r65md.pdf

SJMN380R65F
SJMN380R65F

SJMN380R65MD Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS JD Low drain-source On resistance: R =0.38 (Max.) DS(on) Ultra low gate charge: Qg=27nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G S Ordering Information TO-252 Part Number Marking Package SJM

 4.7. Size:680K  auk
sjmn380r65zd.pdf

SJMN380R65F
SJMN380R65F

SJMN380R65ZD Super Junction MOSFET 650V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) gD Extremely low switching loss Built-in ESD Diode 100% avalanche tested Halogen free and RoHS compliant device G S Ordering Information TO-252 Part Number Marking Package SJMN380R65ZD SJMN380R65Z TO-252 Marking Information Column

 4.8. Size:757K  auk
sjmn380r65cf.pdf

SJMN380R65F
SJMN380R65F

SJMN380R65CF Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.38 (Max.) DS(on) Ultra low gate charge: Qg=17.5nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJ

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