SJMN380R65MD Todos los transistores

 

SJMN380R65MD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SJMN380R65MD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 39 nS
   Cossⓘ - Capacitancia de salida: 899 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: TO-252
     - Selección de transistores por parámetros

 

SJMN380R65MD Datasheet (PDF)

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SJMN380R65MD

SJMN380R65MD Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS JD Low drain-source On resistance: R =0.38 (Max.) DS(on) Ultra low gate charge: Qg=27nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G S Ordering Information TO-252 Part Number Marking Package SJM

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sjmn380r65mf.pdf pdf_icon

SJMN380R65MD

SJMN380R65MF Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.38 (Max.) DS(on) Ultra low gate charge: Qg=27nC(Typ.) RoHS compliant device and Halogen-free device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package

 4.1. Size:662K  auk
sjmn380r65b.pdf pdf_icon

SJMN380R65MD

SJMN380R65B Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS JD Low drain-source On resistance: R =0.38 (Max.) DS(on) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information Part Number Marking Package TO-263 (D2-PAK) SJMN380R65B SJM

 4.2. Size:716K  auk
sjmn380r65cd.pdf pdf_icon

SJMN380R65MD

SJMN380R65CD Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS J Low drain-source On resistance: R =0.38 (Max.) D DS(on) Ultra low gate charge: Qg=17.5nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252 SJMN38

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FQD16N25C | ME7607 | BUK139-50DL | 2N6764 | ME7620-G | APTM100UM65SCAVG | AONS66916T

 

 
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