SJMN380R70B Todos los transistores

 

SJMN380R70B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SJMN380R70B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 105 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 470 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: TO-263
     - Selección de transistores por parámetros

 

SJMN380R70B Datasheet (PDF)

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SJMN380R70B

SJMN380R70B Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS J Low drain-source On resistance: R =0.38 (Max.) DS(on) D Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information TO-263 (D2-PAK) Part Number Marking Package SJMN380R70B SJ

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SJMN380R70B

SJMN380R70F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS J Low drain-source On resistance: R =0.38 (Max.) DS(on) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN380R70F N380R70 TO

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SJMN380R70B

SJMN380R70D Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS J Low drain-source On resistance: R =0.38 (Max.) DS(on)D Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252 SJMN380R70D SJMN380R

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sjmn380r65b.pdf pdf_icon

SJMN380R70B

SJMN380R65B Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =700V (@T =150C) DS JD Low drain-source On resistance: R =0.38 (Max.) DS(on) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information Part Number Marking Package TO-263 (D2-PAK) SJMN380R65B SJM

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SSM3K16FV | MTB20N06KJ3 | 2SK3666 | 24NM60L-T3B-T | 2SK2327 | IRHMK57260SE | FDMS86263P

 

 
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