FDP39N20 Todos los transistores

April 2007 TM UniFET FDP39N20 / FDPF39N20 200V N-Channel MOSFET Features Description 39A, 200V, RDS(on) = 0.066 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 38 nC) stripe, DMOS technology. Low Crss ( typical 57 pF) This advanced technology has been especially

August 2014 FDP39N20 / FDPF39N20 N-Channel UniFETTM MOSFET 200 V, 39 A, 66 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 66 m (Max.) @ VGS = 10 V, ID = 19.5 A MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 38 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 5

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FDP39N20 FEATURES With TO-220 packaging Drain Source Voltage- V 200V DSS Static drain-source on-resistance RDS(on) 66m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25