SJMN600R70MD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SJMN600R70MD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 65 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 735 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO-252

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SJMN600R70MD Datasheet (PDF)

..1. Size:764K auk
sjmn600r70md.pdf

SJMN600R70MD Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) D DS(on) Ultra low gate charge: Qg=15nC(Typ.) RoHS compliant and Halogen free device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252 SJMN600R

3.1. Size:803K auk
sjmn600r70mf.pdf

SJMN600R70MF Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=15nC(Typ.) RoHS compliant device and Halogen-free device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package

4.1. Size:567K 1
sjmn600r70f.pdf

SJMN600R70F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SJMN600R70F N600R70 T

4.2. Size:629K auk
sjmn600r70zf.pdf

SJMN600R70ZF Super Junction MOSFET 700V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) g Extremely low switching loss Built-in ESD Diode 100% avalanche tested Halogen free and RoHS compliant device G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN600R70ZF N600R70Z TO-220F-3L Marking Information Colum

4.3. Size:759K auk
sjmn600r70d.pdf

SJMN600R70D Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS JD Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G S Ordering Information TO-252 Part Number Marking Package SJMN600R70D SJMN600R7

4.4. Size:657K auk
sjmn600r70i.pdf

SJMN600R70I Super Junction MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source voltage: V =750V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information I-PAK Part Number Marking Package (Short Lead) I-PAK SJM

4.5. Size:678K auk
sjmn600r70zd.pdf

SJMN600R70ZD Super Junction MOSFET 700V N-Channel Super Junction MOSFET Features Very Low FOM (R X Q ) DS(on) gD Extremely low switching loss Built-in ESD Diode 100% avalanche tested Halogen free and RoHS compliant device G S Ordering Information TO-252 Part Number Marking Package SJMN600R70ZD SJMN600R70Z TO-252 Marking Information Column

4.6. Size:781K auk
sjmn600r70f.pdf

SJMN600R70F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: V =750V (@T =150C) DS J Low drain-source On resistance: R =0.6 (Max.) DS(on) Ultra low gate charge: Qg=13.5nC(Typ.) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SJMN600R70F N600R70 T

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