SNN060L10F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SNN060L10F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 63 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 57 nS

Cossⓘ - Capacitancia de salida: 584 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm

Encapsulados: TO-220F

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SNN060L10F datasheet

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 snn060l10f.pdf pdf_icon

SNN060L10F

SNN060L10F N-channel Trench MOSFET Features Extremely low On-state resistance Excellent QgxRDS(on) product (FoM) Advanced trench process technology Halogen-free & RoHS compliant device Applications Synchronous Rectification for AC/DC Quick Charger G D S Battery management UPS (Uninterruptible Power Supply) TO-220F-3L Ordering Information

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 snn060l10nl.pdf pdf_icon

SNN060L10F

SNN060L10NL N-Channel Trench MOSFET 100V N-channel Power MOSFETs Features Extremely low On-state resistance Excellent Q * R product (FOM) g DS(on) Advanced trench process technology Halogen free available and RoHS compliant device Ordering Information Part Number Marking Package TESOP-8 SNN060L10NL N060L10 TESOP-8 (DFN5x6) (DFN 5x6) Marking Informati

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 snn0630q.pdf pdf_icon

SNN060L10F

SNN0630Q Advanced N-Ch Trench MOSFET Portable Equipment Application Features Low On-state resistance 28m at VGS = 10V, ID = 2.9A Low gate charge Qg= 4.5nC (Typ.) High performance trench technology for extremely low RDS(on) 100% avalanche tested D Halogen free and RoHS compliant device G Ordering Information D S Part Number Marking Package S

Otros transistores... SMK1040F, SMK1065F, SMN03T80I, SMN0665FD, SMN630LD, SNA3100L10NL, SNA3100L10NN, SNN055N085D, AO3401, SNN060L10NL, SNN10R10LD, SNN10R10LF, SNN1120L10Q, SNN1530NL, SNN1830NL, SNN200L10D, SNN300L06D