SNN3100L15Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SNN3100L15Q
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21.6 nS
Cossⓘ - Capacitancia de salida: 36 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.32 Ohm
Paquete / Cubierta: SOT-223
Búsqueda de reemplazo de SNN3100L15Q MOSFET
SNN3100L15Q Datasheet (PDF)
snn3100l15q.pdf

SNN3100L15Q Advanced N-Ch Trench MOSFET 150V Fast Switching MOSFETs Features Low On-state resistance: 310m at V = 10V, I = 2A GS D Low gate charge: Q = 13nC (Typ.) g High performance trench technology 100% avalanche tested D Halogen free and RoHS compliant device G Ordering Information D S Part Number Marking Package SOT-223 SNN3100L15Q N
snn3100l10q.pdf

SNN3100L10Q Advanced N-Ch Trench MOSFET 100V Fast Switching MOSFETs Features Low On-state resistance: 310m at V = 10V, I = 2A GS D Low gate charge: Q = 7nC(Typ.) at V = 10V g GS High performance trench technology 100% avalanche tested D Halogen free and RoHS compliant device G Ordering Information D S Part Number Marking Package SOT-223 S
snn3100l10d.pdf

SNN3100L10D Advanced N-Ch Trench MOSFET 100V Fast Switching MOSFETs Features Low On-state resistance: 310m at V = 10V, I = 2A GS D Low gate charge: Q = 7nC (Typ.) gD Logic level gate drive 100% avalanche tested Halogen free and RoHS compliant device G Ordering Information S Part Number Marking Package TO-252 SNN3100L10D N3100L10 TO-252 M
Otros transistores... SNN10R10LF , SNN1120L10Q , SNN1530NL , SNN1830NL , SNN200L10D , SNN300L06D , SNN3100L10D , SNN3100L10Q , TK10A60D , SNN3530BNL , SNN3530NL , SNP130L04F , SNP250L06F , SRN0765D , SRN0765F , SRN127 , SRN1660F .
History: 3N60AF
History: 3N60AF



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