SUN05A25F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SUN05A25F
   Código: SUN05A25
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 6 nC
   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm
   Paquete / Cubierta: TO-220F

Búsqueda de reemplazo de MOSFET SUN05A25F

SUN05A25F Datasheet (PDF)

..1. Size:680K auk
sun05a25f.pdf

SUN05A25F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.92 (Typ.) DS(on) Low gate charge: Q =6nC (Typ.) g Low reverse transfer capacitance: C =5pF (Typ.) rss RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN05A25F SU

8.1. Size:603K auk
sun05a50zd.pdf

SUN05A50ZD New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =1.23 (Typ.) DS(on)D Low gate charge: Q =17.5nC (Typ.) g Low reverse transfer capacitance: C =5pF (Typ.) rss Built-in ESD Diode 100% avalanche tested G S Ordering Information TO-252 Part Number Marking Package SUN05A50ZD

8.2. Size:640K auk
sun05a50zf.pdf

SUN05A50ZF New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =1.23 (Typ.) DS(on) Low gate charge: Q =17.5nC (Typ.) g Low reverse transfer capacitance: C =5pF (Typ.) rss Built-in ESD Diode 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN05A50ZF

9.1. Size:371K auk
sun0550f.pdf

SUN0550F Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=1.23 (Typ.) Low gate charge: Qg=10.5nC (Typ.) Low reverse transfer capacitance: Crss=2pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN0550F SUN0550 TO-220F

9.2. Size:304K auk
sun0550d.pdf

SUN0550D Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=1.23 (Typ.) Low gate charge: Qg=10.5nC (Typ.) D Low reverse transfer capacitance: Crss=2pF (Typ.) Halogen free device and RoHS compliant device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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Recientemente añadidas las descripciónes de los transistores: