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SUN830DN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SUN830DN
   Código: SUN830
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 13.5 nC
   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO-252

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SUN830DN Datasheet (PDF)

 ..1. Size:660K  auk
sun830dn.pdf

SUN830DN
SUN830DN

SUN830DN Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =1.3 (Typ.) DS(on) Low gate charge: Q =13.5nC (Typ.) D g Low reverse transfer capacitance: C =8pF (Typ.) rss Halogen free device and RoHS compliant device 100% avalanche tested G S Ordering Information TO-252 Part Number Marking Packa

 7.1. Size:431K  auk
sun830d.pdf

SUN830DN
SUN830DN

SUN830DAdvanced N-Ch Power MOSFETHIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =1.3 (Typ.) DS(on) Low gate charge: Q =13.5nC (Typ.) gD Low reverse transfer capacitance: C =8pF (Typ.) rss Halogen free device and RoHS compliant device 100% avalanche tested GOrdering Information SPart Number Marking Package TO-252

 8.1. Size:482K  auk
sun830f.pdf

SUN830DN
SUN830DN

SUN830FNew Generation N-Ch Power MOSFETHIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =1.3 (Typ.) DS(on) Low gate charge: Q =13nC (Typ.) g Low reverse transfer capacitance: C =8pF (Typ.) rss RoHS compliant device 100% avalanche tested Ordering Information G D SPart Number Marking Package TO-220F-3L SUN830F SUN830 TO

 8.2. Size:583K  auk
sun830i.pdf

SUN830DN
SUN830DN

SUN830I Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features BV =500V Min. DSS Low gate charge: Q =13.5nC (Typ.) g Low drain-source On resistance: R =1.3 (Typ.) DS(on) RoHS compliant device 100% avalanche tested G D S Ordering Information Part Number Marking Package I-PAK SUN830I SUN830 I-PAK Marking Information SUN Column

Otros transistores... P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF640N , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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