SUN830DN Todos los transistores

 

SUN830DN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SUN830DN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO-252
 

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SUN830DN datasheet

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 sun830dn.pdf pdf_icon

SUN830DN

SUN830DN Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance R =1.3 (Typ.) DS(on) Low gate charge Q =13.5nC (Typ.) D g Low reverse transfer capacitance C =8pF (Typ.) rss Halogen free device and RoHS compliant device 100% avalanche tested G S Ordering Information TO-252 Part Number Marking Packa

 7.1. Size:431K  auk
 sun830d.pdf pdf_icon

SUN830DN

SUN830D Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance R =1.3 (Typ.) DS(on) Low gate charge Q =13.5nC (Typ.) g D Low reverse transfer capacitance C =8pF (Typ.) rss Halogen free device and RoHS compliant device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252

 8.1. Size:482K  auk
 sun830f.pdf pdf_icon

SUN830DN

SUN830F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance R =1.3 (Typ.) DS(on) Low gate charge Q =13nC (Typ.) g Low reverse transfer capacitance C =8pF (Typ.) rss RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN830F SUN830 TO

 8.2. Size:583K  auk
 sun830i.pdf pdf_icon

SUN830DN

SUN830I Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features BV =500V Min. DSS Low gate charge Q =13.5nC (Typ.) g Low drain-source On resistance R =1.3 (Typ.) DS(on) RoHS compliant device 100% avalanche tested G D S Ordering Information Part Number Marking Package I-PAK SUN830I SUN830 I-PAK Marking Information SUN Column

MOSTRAR MÁS

Otros transistores... SRN1865FD , SUN05A25F , SUN05A50ZD , SUN05A50ZF , SUN09A40D , SUN50A20CI , SUN82A20CI , SUN830D , 18N50 , SUN830F , SUN830I , QM1830M3 , AOCR33105E , AOCR35101E , AOCR36330 , AOCR32326 , AOCA32112E .

 

 
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