FDS8690 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

January 2006FDS8690N-Channel PowerTrench MOSFET30V, 14A, 7.6mGeneral Description Features Max rDS(on) = 7.6m, VGS = 10V, ID = 14AThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 11.4m, VGS = 4.5V, ID = 11.5Aimprove the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conv

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

May 2012FDS86540 N-Channel PowerTrench MOSFET 60 V, 18 A, 4.5 mFeatures General Description Max rDS(on) = 4.5 m at VGS = 10 V, ID = 18 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 5.4 m at VGS = 8 V, ID = 16.5 Aringing of DC/DC converters using either synchronous or High performanc

March 2011FDS86140 N-Channel PowerTrench MOSFET 100 V, 11.2 A, 9.8 mFeatures General Description Max rDS(on) = 9.8 m at VGS = 10 V, ID = 11.2 AThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 16 m at VGS = 6 V, ID = 9 A Semiconductors advanced Power Trench process that has High performance trench technologh for extremely low rDS(on) been optimized f

December 2007FDS8672S tmN-Channel PowerTrench SyncFET 30V, 18A, 4.8mFeatures General Description Max rDS(on) = 4.8m at VGS = 10V, ID = 18A The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15A MOSFET is designed to maximize power conversion efficiency, pro

April 2011FDS86252N-Channel Power Trench MOSFET 150 V, 4.5 A, 55 mFeatures General Description Max rDS(on) = 55 m at VGS = 10 V, ID = 4.5 A This N-Channel MOSFET is produced using FairchildSemiconductors advanced Power Trench process that has Max rDS(on) = 80 m at VGS = 6 V, ID = 3.7 Abeen especially tailored to minimize the on-state resistance and High performa

August 2010FDS86242N-Channel PowerTrench MOSFET 150 V, 4.1 A, 67 mFeatures General Description Max rDS(on) = 67 m at VGS = 10 V, ID = 4.1 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 98 m at VGS = 6 V, ID = 3.3 A been optimized for rDS(on), switching performance and High performance tren

July 2011FDS86141N-Channel Power Trench MOSFET 100 V, 7 A, 23 mFeatures General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 36 m at VGS = 6 V, ID = 5.5 Abeen especially tailored to minimize the on-state resistance and High performance

January 2008FDS8670 tm30V N-Channel PowerTrench MOSFET General Description Features This device has been designed specifically to improve 21 A, 30 V Max RDS(ON) = 3.7 m @ VGS = 10 V the efficiency of DC-DC converters. Using new Max RDS(ON) = 5.0 m @ VGS = 4.5 V techniques in MOSFET construction, the various High performance trench technology for extremely lo

June 2010FDS86240N-Channel PowerTrench MOSFET 150 V, 7.5 A, 19.8 mFeatures General Description Max rDS(on) = 19.8 m at VGS = 10 V, ID = 7.5 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 26 m at VGS = 6 V, ID = 6.4 A been optimized for rDS(on), switching performance and High performance tre

March 2009FDS8638N-Channel PowerTrench MOSFET 40 V, 18 A, 4.3 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.3 m at VGS = 10 V, ID = 18 ASemiconductors advance Power Trench process that has been especially tailored to minimize the on-state resistance and Max rDS(on) = 5.4 m at VGS = 4.5 V, ID = 16 A yet maintai

July 2011FDS86106N-Channel Power Trench MOSFET 100 V, 3.4 A, 105 mFeatures General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 3.4 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 171 m at VGS = 6 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) been optimized

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Sept 2017FDS86242N-Channel PowerTrench MOSFET 150 V, 4.1 A, 67 mFeatures General Description Max rDS(on) = 67 m at VGS = 10 V, ID = 4.1 AThis N -Channel MOSFET is produ ced using ON Semiconductors advanced Power T rench process that has Max rDS(on) = 98 m at VGS = 6 V, ID = 3.3 A been optimized for rDS(on), switching per formance and High performance trench te

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDS86242www.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.080 at VGS = 10 V 5.4 Extremely Low Qgd for Switching Losses150 23 nC0.085 at VGS = 8 V 4.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONSSO-