FQPF20N06 Todos los transistores

 ..1. Size:653K  fairchild semi
 fqpf20n06.pdf

May 2001 TM QFET FQPF20N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15A, 60V, RDS(on) = 0.06 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 11.5 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored t

 ..2. Size:565K  onsemi
 fqpf20n06.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:661K  fairchild semi
 fqpf20n06l.pdf

May 2001 TM QFET FQPF20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15.7A, 60V, RDS(on) = 0.055 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.5 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been especially t

 7.1. Size:450K  1
 fqpf20n60 fqp20n60.pdf

FQP20N60/FQPF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150 The FQP20N60 & FQPF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.1. Size:570K  fairchild semi
 fqpf2p40.pdf

December 2000 TM QFET QFET QFET QFET FQPF2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -1.34A, -400V, RDS(on) = 6.5 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology is

 9.2. Size:738K  fairchild semi
 fqpf22n30.pdf

May 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 12A, 300V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 47 nC) planar stripe, DMOS technology. Low Crss ( typical 40 pF) This advanced technology has been es

 9.3. Size:760K  fairchild semi
 fqpf27n25t.pdf

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 50 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been es

 9.4. Size:732K  fairchild semi
 fqpf2n30.pdf

May 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.34A, 300V, RDS(on) = 3.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 3.7 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has been

 9.5. Size:726K  fairchild semi
 fqpf2n90.pdf

April 2000 TM QFET QFET QFET QFET 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.4A, 900V, RDS(on) = 7.2 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has be

 9.6. Size:1366K  fairchild semi
 fqp2n60c fqpf2n60c.pdf

April 2006 QFET FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect rDS(on) = 4.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge (typical 8.5 nC) planar stripe, DMOS technology. Low Crss (typical 4.3 pF) This advanced technology has been especially tailo

 9.7. Size:561K  fairchild semi
 fqpf2n60.pdf

April 2000 TM QFET QFET QFET QFET FQPF2N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.6A, 600V, RDS(on) = 4.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been

 9.8. Size:622K  fairchild semi
 fqpf2n70.pdf

TM QFET FQPF2N70 700V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 700V, RDS(on) = 6.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been especially tailored to Fa

 9.9. Size:619K  fairchild semi
 fqpf2n80.pdf

September 2000 TM QFET FQPF2N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.5A, 800V, RDS(on) = 6.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tail

 9.10. Size:677K  fairchild semi
 fqpf2na90.pdf

September 2000 TM QFET QFET QFET QFET FQPF2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.7A, 900V, RDS(on) = 5.8 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has

 9.11. Size:725K  fairchild semi
 fqpf2n40.pdf

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.1A, 400V, RDS(on) = 5.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.0 nC) planar stripe, DMOS technology. Low Crss ( typical 3.0 pF) This advanced technology has bee

 9.12. Size:674K  fairchild semi
 fqpf27p06.pdf

May 2001 TM QFET FQPF27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -17A, -60V, RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 33 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especially tailored

 9.13. Size:625K  fairchild semi
 fqpf22p10.pdf

TM QFET FQPF22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -13.2A, -100V, RDS(on) = 0.125 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 160 pF) This advanced technology has been especially tailored to

 9.14. Size:765K  fairchild semi
 fqpf27n25.pdf

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 50 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been es

 9.15. Size:539K  fairchild semi
 fqpf2p25.pdf

April 2000 TM QFET QFET QFET QFET FQPF2P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -1.8A, -250V, RDS(on) = 4.0 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.5 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has be

 9.16. Size:758K  fairchild semi
 fqpf28n15 fqpf28n15t.pdf

May 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 16.7A, 150V, RDS(on) = 0.09 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been

 9.17. Size:966K  fairchild semi
 fqpf2n80ydtu.pdf

July 2013 FQPF2N80YDTU N-Channel QFET MOSFET 8 0 V, 1.5 A, Features Description This N-Channel enhancement mode power MOSFET is 1.5 A, 8 0 V, RDS(on)= (Max.)@VGS=10 V, ID=0.75 A produced using Fairchild Semiconductor s proprietary Low Gate Charge (Typ. 12 nC) planar stripe and DMOS technology. This advanced Low Crss (Typ. 5.5 pF) MOSFET technolog

 9.18. Size:711K  fairchild semi
 fqpf2n50.pdf

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.3A, 500V, RDS(on) = 5.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.0 pF) This advanced technology has bee

 9.19. Size:1596K  onsemi
 fqp2n60c fqpf2n60c.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.20. Size:550K  onsemi
 fqpf27n25.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.21. Size:1344K  onsemi
 fqpf2n80ydtu.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.22. Size:2073K  cn vbsemi
 fqpf27p06.pdf

FQPF27P06 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.050 at VGS = - 10 V - 30 - 60 67 100 % Rg and UIS Tested 0.060 at VGS = - 4.5 V - 24 Compliant to RoHS Directive 2002/95/EC TO-220 FULLPAK S G S D D G P-Channel