AONS66613 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AONS66613

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 214 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 196 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 965 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm

Encapsulados: DFN5X6-8L

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AONS66613 datasheet

 ..1. Size:445K  aosemi
 aons66613.pdf pdf_icon

AONS66613

AONS66613 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 196A MSL1 Rated 260 C reflow 175 C Junction temperature RDS(ON) (at VGS=10V)

 6.1. Size:377K  aosemi
 aons66612.pdf pdf_icon

AONS66613

AONS66612 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 268A Low RDS(ON) RDS(ON) (at VGS=10V)

 6.2. Size:410K  aosemi
 aons66615.pdf pdf_icon

AONS66613

AONS66615 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 85A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.3. Size:447K  aosemi
 aons66617.pdf pdf_icon

AONS66613

AONS66617 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 110A MSL1 Rated 260 C reflow 175 C Junction temperature RDS(ON) (at VGS=10V)

MOSTRAR MÁS

Otros transistores... AONS66521, AONS66524, AONS66605, AONS66607, AONS66609, AONS66609T, AONS66612, AONS66612T, IRF3205, AONS66614, AONS66615, AONS66615T, AONS66617, AONS66620, AONS66641, AONS66641T, AONS66811