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AONS66613 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AONS66613
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 214 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 196 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 965 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
   Paquete / Cubierta: DFN5X6-8L
 

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AONS66613 Datasheet (PDF)

 ..1. Size:445K  aosemi
 aons66613.pdf pdf_icon

AONS66613

AONS66613TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 196A MSL1 Rated 260C reflow 175C Junction temperature RDS(ON) (at VGS=10V)

 6.1. Size:377K  aosemi
 aons66612.pdf pdf_icon

AONS66613

AONS66612TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 268A Low RDS(ON) RDS(ON) (at VGS=10V)

 6.2. Size:410K  aosemi
 aons66615.pdf pdf_icon

AONS66613

AONS66615TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 85A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 6.3. Size:447K  aosemi
 aons66617.pdf pdf_icon

AONS66613

AONS66617TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 110A MSL1 Rated 260C reflow 175C Junction temperature RDS(ON) (at VGS=10V)

MOSTRAR MÁS

Otros transistores... AONS66521 , AONS66524 , AONS66605 , AONS66607 , AONS66609 , AONS66609T , AONS66612 , AONS66612T , IRF3205 , AONS66614 , AONS66615 , AONS66615T , AONS66617 , AONS66620 , AONS66641 , AONS66641T , AONS66811 .

History: IPA65R190CFD | AON7426 | DMG7702SFG | IPB65R280C6 | AP3P3R0MT | DH066N06 | AON7430

 

 
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