FQPF27P06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQPF27P06
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 47 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de FQPF27P06 MOSFET
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FQPF27P06 datasheet
fqpf27p06.pdf
May 2001 TM QFET FQPF27P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -17A, -60V, RDS(on) = 0.07 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 33 nC) planar stripe, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especially tailored
fqpf27p06.pdf
FQPF27P06 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.050 at VGS = - 10 V - 30 - 60 67 100 % Rg and UIS Tested 0.060 at VGS = - 4.5 V - 24 Compliant to RoHS Directive 2002/95/EC TO-220 FULLPAK S G S D D G P-Channel
fqpf27n25t.pdf
May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 50 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been es
fqpf27n25.pdf
May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 50 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been es
Otros transistores... HUF76429DF085 , FQPF19N20C , FCU5N60 , FQPF20N06 , FQPF20N06L , FQPF22N30 , FQPF22P10 , FQPF27N25 , IRF4905 , FQPF2N60C , FCA20N60F109 , FQPF2N70 , FQPF2N80 , FCPF16N60 , FQPF30N06L , FQPF32N20C , FDMC8854 .
History: FQPF65N06 | FDD20AN06F085 | FQPF630
History: FQPF65N06 | FDD20AN06F085 | FQPF630
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