FCPF16N60 Todos los transistores

 

FCPF16N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FCPF16N60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 37.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm

Encapsulados: TO220F

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FCPF16N60 datasheet

 ..1. Size:639K  fairchild semi
fcp16n60 fcpf16n60.pdf pdf_icon

FCPF16N60

August 2014 FCP16N60 / FCPF16N60 N-Channel SuperFET MOSFET 600 V, 16 A, 260 m Features Description SuperFET MOSFET is Fairchild Semiconductor s first genera- 650V @ TJ = 150 C tion of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 220 m utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 55 nC ) r

 ..2. Size:1208K  fairchild semi
fcp16n60 fcpf16n60.pdf pdf_icon

FCPF16N60

December 2008 TM SuperFET FCP16N60 / FCPF16N60 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on) = 0.22 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge perfo

 ..3. Size:668K  onsemi
fcp16n60 fcpf16n60.pdf pdf_icon

FCPF16N60

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..4. Size:222K  inchange semiconductor
fcpf16n60.pdf pdf_icon

FCPF16N60

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCPF16N60 FEATURES Drain-source on-resistance RDS(on) 0.26 @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Be suitable for various AC/DC power conversion in switching mode operation for system miniaturization and

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