AOTF125A60FDL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOTF125A60FDL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 52 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 32 nS
Cossⓘ - Capacitancia de salida: 90 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de AOTF125A60FDL MOSFET
- Selecciónⓘ de transistores por parámetros
AOTF125A60FDL datasheet
..1. Size:452K aosemi
aotf125a60fdl.pdf 
AOTF125A60FDL TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max
4.1. Size:486K aosemi
aotf125a60l.pdf
AOT125A60L/AOTF125A60L/AOB125A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max
4.2. Size:486K aosemi
aot125a60l aotf125a60l aob125a60l.pdf
AOT125A60L/AOTF125A60L/AOB125A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max
8.1. Size:381K aosemi
aotf12n65.pdf
AOT12N65/AOTF12N65 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT12N65 & AOTF12N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
8.2. Size:433K aosemi
aotf12n50.pdf
AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)
8.3. Size:447K aosemi
aotf12t50p.pdf
AOTF12T50P 500V,12A N-Channel MOSFET General Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 600V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max
8.4. Size:435K aosemi
aot12n65 aotf12n65 aotf12n65l aob12n65l.pdf
AOT12N65/AOTF12N65/AOTF12N65L/AOB12N65L 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT12N65 & AOTF12N65 & AOTF12N65L & AOB12N65L have been fabricated using an advanced ID (at VGS=10V) 12A high voltage MOSFET process that is designed to deliver RDS(ON) (at VGS=10V)
8.5. Size:385K aosemi
aot12n65 aotf12n65 aob12n65.pdf
AOT12N65/AOTF12N65/AOB12N65 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT12N65 & AOTF12N65 & AOB12N65 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)
8.6. Size:450K aosemi
aotf12n60.pdf
AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
8.7. Size:435K aosemi
aot12n50 aob12n50 aotf12n50.pdf
AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)
8.8. Size:324K aosemi
aotf12n30.pdf
AOT12N30/AOTF12N30 300V,11.5A N-Channel MOSFET General Description Product Summary VDS 350V@150 The AOT12N30/AOTF12N30 is fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 11.5A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)
8.9. Size:590K aosemi
aotf12n60fd.pdf
AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)
8.10. Size:233K aosemi
aotf12t60.pdf
AOTF12T60 600V,12A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V Latest Trench Power AlphaMOS-II technology Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max
8.11. Size:575K aosemi
aot12n60 aotf12n60.pdf
AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
8.12. Size:498K aosemi
aotf12t60p.pdf
AOB12T60P/AOTF12T60P 600V,12A N-Channel MOSFET General Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max
8.13. Size:495K aosemi
aob12t60p aotf12t60p.pdf
AOB12T60P/AOTF12T60P 600V,12A N-Channel MOSFET General Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max
8.14. Size:378K aosemi
aot12n30 aotf12n30.pdf
AOT12N30/AOTF12N30 300V,11.5A N-Channel MOSFET General Description Product Summary VDS 350V@150 The AOT12N30/AOTF12N30 is fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 11.5A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)
8.15. Size:447K aosemi
aotf12t50pl.pdf
AOTF12T50P 500V,12A N-Channel MOSFET General Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 600V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max
8.16. Size:250K inchange semiconductor
aotf12n65.pdf
isc N-Channel MOSFET Transistor AOTF12N65 FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 0.72 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
8.17. Size:259K inchange semiconductor
aotf12n50.pdf
isc N-Channel MOSFET Transistor AOTF12N50 FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.52 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
8.18. Size:250K inchange semiconductor
aotf12n60.pdf
isc N-Channel MOSFET Transistor AOTF12N60 FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
8.19. Size:252K inchange semiconductor
aotf12n30.pdf
isc N-Channel MOSFET Transistor AOTF12N30 FEATURES Drain Current I = 11.5A@ T =25 D C Drain Source Voltage- V = 300V(Min) DSS Static Drain-Source On-Resistance R = 0.42 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p
8.20. Size:250K inchange semiconductor
aotf12n60fd.pdf
isc N-Channel MOSFET Transistor AOTF12N60FD FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur
8.21. Size:250K inchange semiconductor
aotf12n65l.pdf
isc N-Channel MOSFET Transistor AOTF12N65L FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 0.72 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
8.22. Size:251K inchange semiconductor
aotf12t50pl.pdf
isc N-Channel MOSFET Transistor AOTF12T50PL FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION General Lighting for LED and CCFL AC/DC Power supplies ABSOL
Otros transistores... AOT66916L, AOT66918L, AOT66919L, AOT66920L, AOT780A70L, AOTF080A60L, AOTF095A60FDL, AOTF095A60L, IRFB4110, AOTF125A60L, AOTF160A60FDL, AOTF160A60L, AOTF190A60CL, AOTF280A60L, AOTF360A70L, AOTF380A60CL, AOTF380A60L
