AOTF160A60FDL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOTF160A60FDL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 48 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 28 nS
Cossⓘ - Capacitancia de salida: 62 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de AOTF160A60FDL MOSFET
- Selecciónⓘ de transistores por parámetros
AOTF160A60FDL datasheet
aotf160a60fdl.pdf
AOTF160A60FDL TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 40A Optimized switching parameters for better EMI RDS(ON),max
aotf160a60l aot160a60l aob160a60l.pdf
AOTF160A60L/AOT160A60L/AOB160A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max
aotf160a60l.pdf
AOTF160A60L/AOT160A60L/AOB160A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max
aot16n50 aotf16n50.pdf
AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 16A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
Otros transistores... AOT66919L, AOT66920L, AOT780A70L, AOTF080A60L, AOTF095A60FDL, AOTF095A60L, AOTF125A60FDL, AOTF125A60L, IRFP260N, AOTF160A60L, AOTF190A60CL, AOTF280A60L, AOTF360A70L, AOTF380A60CL, AOTF380A60L, AOTF450A70L, AOTF600A60L
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