AOTF160A60FDL Todos los transistores

 

AOTF160A60FDL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOTF160A60FDL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 28 nS
   Cossⓘ - Capacitancia de salida: 62 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: TO220F
 

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AOTF160A60FDL Datasheet (PDF)

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AOTF160A60FDL

AOTF160A60FDLTM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 40A Optimized switching parameters for better EMI RDS(ON),max

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AOTF160A60FDL

AOTF160A60L/AOT160A60L/AOB160A60LTM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max

 8.1. Size:160K  aosemi
aotf16n50.pdf pdf_icon

AOTF160A60FDL

AOT16N50/AOTF16N50500V, 16A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT16N50 & AOTF16N50 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 16Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 8.2. Size:226K  inchange semiconductor
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AOTF160A60FDL

isc N-Channel Mosfet Transistor AOTF16N50FEATURESDrain Current I = 16A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSLow ON Resistance R = 0.37(Max)DS(on)Low leakage currentFast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for high efficiency switch mode power supply.ABSOLUTE

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