AOTF380A60CL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOTF380A60CL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 27
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 600
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 11
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13
nS
Cossⓘ - Capacitancia
de salida: 29
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38
Ohm
Paquete / Cubierta:
TO220F
Búsqueda de reemplazo de AOTF380A60CL MOSFET
-
Selección ⓘ de transistores por parámetros
AOTF380A60CL datasheet
..1. Size:649K aosemi
aotf380a60cl aot380a60cl aob380a60cl.pdf 
AOTF380A60CL/AOT380A60CL/AOB380A60CL TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max
..2. Size:649K aosemi
aotf380a60cl.pdf
AOTF380A60CL/AOT380A60CL/AOB380A60CL TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max
4.1. Size:647K aosemi
aotf380a60l aot380a60l aob380a60l.pdf
AOTF380A60L/AOT380A60L/AOB380A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max
4.2. Size:647K aosemi
aotf380a60l.pdf
AOTF380A60L/AOT380A60L/AOB380A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max
9.1. Size:383K aosemi
aot3n100 aotf3n100.pdf
AOT3N100/AOTF3N100 1000V,2.8A N-Channel MOSFET General Description Product Summary VDS 1100@150 The AOT3N100 & AOTF3N100 are fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 2.8A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)
9.2. Size:669K aosemi
aotf360a70l.pdf
AOT360A70L/AOTF360A70L/AOB360A70L TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 48A Optimized switching parameters for better EMI RDS(ON),max
9.3. Size:158K aosemi
aotf3n50.pdf
AOT3N50/AOTF3N50 500V, 3A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT3N50 & AOTF3N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 3A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
9.4. Size:329K aosemi
aotf3n100.pdf
AOT3N100/AOTF3N100 1000V,2.8A N-Channel MOSFET General Description Product Summary VDS 1100@150 The AOT3N100 & AOTF3N100 are fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 2.8A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)
9.5. Size:272K aosemi
aotf3n90.pdf
AOTF3N90 900V, 2.4A N-Channel MOSFET General Description Product Summary VDS 1000V@150 The AOTF3N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 2.4A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)
9.6. Size:669K aosemi
aot360a70l aotf360a70l aob360a70l.pdf
AOT360A70L/AOTF360A70L/AOB360A70L TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 48A Optimized switching parameters for better EMI RDS(ON),max
9.7. Size:274K aosemi
aotf3n80.pdf
AOTF3N80 800V, 2.8A N-Channel MOSFET General Description Product Summary VDS 900V@150 The AOTF3N80 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 2.8A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)
9.8. Size:251K inchange semiconductor
aotf3n50.pdf
isc N-Channel MOSFET Transistor AOTF3N50 FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =3.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos
9.9. Size:252K inchange semiconductor
aotf3n100.pdf
isc N-Channel MOSFET Transistor AOTF3N100 FEATURES Drain Current I = 2.8A@ T =25 D C Drain Source Voltage- V = 1000V(Min) DSS Static Drain-Source On-Resistance R = 6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
9.10. Size:252K inchange semiconductor
aotf3n90.pdf
isc N-Channel MOSFET Transistor AOTF3N90 FEATURES Drain Current I =2.4A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Static Drain-Source On-Resistance R =6.7 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose
9.11. Size:252K inchange semiconductor
aotf3n80.pdf
isc N-Channel MOSFET Transistor AOTF3N80 FEATURES Drain Current I = 2.8A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R =4.8 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos
Otros transistores... AOTF095A60L
, AOTF125A60FDL
, AOTF125A60L
, AOTF160A60FDL
, AOTF160A60L
, AOTF190A60CL
, AOTF280A60L
, AOTF360A70L
, AON6414A
, AOTF380A60L
, AOTF450A70L
, AOTF600A60L
, AOTF600A70FL
, AOTF600A70L
, AOTF66613L
, AOTF66616L
, AOTF66811L
.
