AOTF380A60L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOTF380A60L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 27 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 13 nS
Cossⓘ - Capacitancia de salida: 29 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de AOTF380A60L MOSFET
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AOTF380A60L datasheet
..1. Size:647K aosemi
aotf380a60l aot380a60l aob380a60l.pdf 
AOTF380A60L/AOT380A60L/AOB380A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max
..2. Size:647K aosemi
aotf380a60l.pdf
AOTF380A60L/AOT380A60L/AOB380A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max
4.1. Size:649K aosemi
aotf380a60cl aot380a60cl aob380a60cl.pdf
AOTF380A60CL/AOT380A60CL/AOB380A60CL TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max
4.2. Size:649K aosemi
aotf380a60cl.pdf
AOTF380A60CL/AOT380A60CL/AOB380A60CL TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max
9.1. Size:383K aosemi
aot3n100 aotf3n100.pdf
AOT3N100/AOTF3N100 1000V,2.8A N-Channel MOSFET General Description Product Summary VDS 1100@150 The AOT3N100 & AOTF3N100 are fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 2.8A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)
9.2. Size:669K aosemi
aotf360a70l.pdf
AOT360A70L/AOTF360A70L/AOB360A70L TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 48A Optimized switching parameters for better EMI RDS(ON),max
9.3. Size:158K aosemi
aotf3n50.pdf
AOT3N50/AOTF3N50 500V, 3A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT3N50 & AOTF3N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 3A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
9.4. Size:329K aosemi
aotf3n100.pdf
AOT3N100/AOTF3N100 1000V,2.8A N-Channel MOSFET General Description Product Summary VDS 1100@150 The AOT3N100 & AOTF3N100 are fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 2.8A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)
9.5. Size:272K aosemi
aotf3n90.pdf
AOTF3N90 900V, 2.4A N-Channel MOSFET General Description Product Summary VDS 1000V@150 The AOTF3N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 2.4A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)
9.6. Size:669K aosemi
aot360a70l aotf360a70l aob360a70l.pdf
AOT360A70L/AOTF360A70L/AOB360A70L TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 48A Optimized switching parameters for better EMI RDS(ON),max
9.7. Size:274K aosemi
aotf3n80.pdf
AOTF3N80 800V, 2.8A N-Channel MOSFET General Description Product Summary VDS 900V@150 The AOTF3N80 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 2.8A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)
9.8. Size:251K inchange semiconductor
aotf3n50.pdf
isc N-Channel MOSFET Transistor AOTF3N50 FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =3.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos
9.9. Size:252K inchange semiconductor
aotf3n100.pdf
isc N-Channel MOSFET Transistor AOTF3N100 FEATURES Drain Current I = 2.8A@ T =25 D C Drain Source Voltage- V = 1000V(Min) DSS Static Drain-Source On-Resistance R = 6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
9.10. Size:252K inchange semiconductor
aotf3n90.pdf
isc N-Channel MOSFET Transistor AOTF3N90 FEATURES Drain Current I =2.4A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Static Drain-Source On-Resistance R =6.7 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose
9.11. Size:252K inchange semiconductor
aotf3n80.pdf
isc N-Channel MOSFET Transistor AOTF3N80 FEATURES Drain Current I = 2.8A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R =4.8 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos
Otros transistores... AOTF125A60FDL, AOTF125A60L, AOTF160A60FDL, AOTF160A60L, AOTF190A60CL, AOTF280A60L, AOTF360A70L, AOTF380A60CL, IRFB4115, AOTF450A70L, AOTF600A60L, AOTF600A70FL, AOTF600A70L, AOTF66613L, AOTF66616L, AOTF66811L, AOTF66919L
