FQPF33N10 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FQPF33N10 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQPF33N10

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 41 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm

Encapsulados: TO220F

Búsqueda de reemplazo de FQPF33N10 MOSFET

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FQPF33N10 datasheet

..1. Size:591K fairchild semi
fqpf33n10.pdf pdf_icon

April 2000 TM QFET QFET QFET QFET FQPF33N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 18A, 100V, RDS(on) = 0.052 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar stripe, DMOS technology. Low Crss ( typical 62 pF) This advanced technology has been

..2. Size:1214K onsemi
fqpf33n10.pdf pdf_icon

0.1. Size:657K fairchild semi
fqpf33n10l.pdf pdf_icon

September 2000 TM QFET QFET QFET QFET FQPF33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 18A, 100V, RDS(on) = 0.052 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 70 pF) This advanced technolog

9.1. Size:716K fairchild semi
fqpf34n20.pdf pdf_icon

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 17.5A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has be

9.2. Size:647K fairchild semi
fqpf34n20l.pdf pdf_icon

June 2000 TM QFET QFET QFET QFET FQPF34N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 17.5A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 52 pF) This advanced technology h

9.3. Size:1208K fairchild semi
fqp32n20c fqpf32n20c.pdf pdf_icon

QFET FQP32N20C/FQPF32N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 28A, 200V, RDS(on) = 0.082 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 82.5 nC) planar stripe, DMOS technology. Low Crss ( typical 185 pF) This advanced technology has been especially tailo

9.4. Size:710K fairchild semi
fqpf3n40.pdf pdf_icon

April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.6A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.2 pF) This advanced technology has bee

9.5. Size:810K fairchild semi
fqp3n80c fqpf3n80c.pdf pdf_icon

TM QFET FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored t

9.6. Size:856K fairchild semi
fqp32n12v2 fqpf32n12v2.pdf pdf_icon

QFET FQP32N12V2/FQPF32N12V2 120V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 32 A, 120V, RDS(on) = 0.05 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 41 nC) planar stripe, DMOS technology. Low Crss ( typical 70 pF) This advanced technology has been especially tailor

9.7. Size:677K fairchild semi
fqpf3n90.pdf pdf_icon

September 2000 TM QFET QFET QFET QFET FQPF3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.1A, 900V, RDS(on) = 4.25 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 8.0 pF) This advanced technology has

9.8. Size:638K fairchild semi
fqpf3n80.pdf pdf_icon

September 2000 TM QFET FQPF3N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.8A, 800V, RDS(on) = 5.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 7.0 pF) This advanced technology has been especially tail

9.9. Size:643K fairchild semi
fqpf30n06.pdf pdf_icon

May 2001 TM QFET FQPF30N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 21A, 60V, RDS(on) = 0.04 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 40 pF) This advanced technology has been especially tailored to

9.10. Size:717K fairchild semi
fqpf3n30.pdf pdf_icon

April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.95A, 300V, RDS(on) = 2.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.5 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has bee

9.11. Size:1269K fairchild semi
fqp3n50c fqpf3n50c.pdf pdf_icon

QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description 3 A, 500 V, RDS(on) = 2.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 10 nC ) DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to

9.12. Size:808K fairchild semi
fqpf3n80cydtu.pdf pdf_icon

9.13. Size:653K fairchild semi
fqpf30n06l.pdf pdf_icon

May 2001 TM QFET FQPF30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 22.5A, 60V, RDS(on) = 0.035 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 50 pF) This advanced technology has been especially ta

9.14. Size:555K fairchild semi
fqpf3n60.pdf pdf_icon

April 2000 TM QFET QFET QFET QFET FQPF3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been e

9.15. Size:1267K fairchild semi
fqp3n50c fqpf3n50c.pdf pdf_icon

9.16. Size:620K fairchild semi
fqpf3p50.pdf pdf_icon

August 2000 TM QFET QFET QFET QFET FQPF3P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -1.9A, -500V, RDS(on) = 4.9 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18 nC) planar stripe, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology has be

9.17. Size:724K fairchild semi
fqpf3n25.pdf pdf_icon

November 2013 FQPF3N25 N-Channel QFET MOSFET 250 V, 2.3 A, 2.2 Description Features These N-Channel enhancement mode power field effect 2.3 A, 250 V, RDS(on) = 2.2 (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 1.15 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 4.0 nC) technology has been especially tailored

9.18. Size:531K fairchild semi
fqpf3p20.pdf pdf_icon

QFET P-CHANNEL FQPF3P20 FEATURES BVDSS = -200V Advanced New Design RDS(ON) = 2.7 Avalanche Rugged Technology ID = -2.2A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics TO-220F Unrivalled Gate Charge 6.0nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 2.06 (Typ.) 1 2 3 1. Gate 2. Drain 3.

9.19. Size:1184K onsemi
fqp32n20c fqpf32n20c.pdf pdf_icon

9.20. Size:883K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.21. Size:892K onsemi
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