FDMS9600S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDMS9600S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
Paquete / Cubierta: MLP5X6

Búsqueda de reemplazo de MOSFET FDMS9600S

FDMS9600S Datasheet (PDF)

..1. Size:351K fairchild semi
fdms9600s.pdf

May 2014FDMS9600SDual N-Channel PowerTrench MOSFET Q1: 30V, 32A, 8.5m Q2: 30V, 30A, 5.5m Features General DescriptionQ1: N-ChannelThis device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal Max rDS(on) = 8.5m at VGS = 10V, ID = 12ASynchronous Buck power stage in terms of efficiency and PCB Max rDS(on) = 12.4m at

..2. Size:404K onsemi
fdms9600s.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

8.1. Size:334K fairchild semi
fdms9620s.pdf

July 2007FDMS9620StmDual N-Channel PowerTrench MOSFET Q1: 30V, 16A, 21.5m Q2: 30V, 18A, 13mFeaturesQ1: N-ChannelGeneral Description Max rDS(on) = 21.5m at VGS = 10V, ID = 7.5AThis device includes two specialized MOSFETs in a unique dual Max rDS(on) = 29.5m at VGS = 4.5V, ID = 6.5APower 56 package. It is designed to provide an optimal Q2: N-ChannelSynchronous

8.2. Size:395K onsemi
fdms9620s.pdf

9.1. Size:567K fairchild semi
fdms9408 f085.pdf

December 2014FDMS9408_F085N-Channel PowerTrench MOSFET40 V, 80 A, 1.8 m Features Typical RDS(on) = 1.5 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 71 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/AlternatorForcurre

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: