FQPF3N80C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQPF3N80C 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 39 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.8 Ohm
Encapsulados: TO220F
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FQPF3N80C datasheet
..1. Size:810K fairchild semi
fqp3n80c fqpf3n80c.pdf 
TM QFET FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored t
..2. Size:883K onsemi
fqp3n80c fqpf3n80c.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
0.1. Size:808K fairchild semi
fqpf3n80cydtu.pdf
TM QFET FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been especially tailored t
6.1. Size:638K fairchild semi
fqpf3n80.pdf
September 2000 TM QFET FQPF3N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.8A, 800V, RDS(on) = 5.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 7.0 pF) This advanced technology has been especially tail
8.1. Size:710K fairchild semi
fqpf3n40.pdf
April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.6A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.2 pF) This advanced technology has bee
8.2. Size:677K fairchild semi
fqpf3n90.pdf
September 2000 TM QFET QFET QFET QFET FQPF3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.1A, 900V, RDS(on) = 4.25 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 8.0 pF) This advanced technology has
8.3. Size:717K fairchild semi
fqpf3n30.pdf
April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 1.95A, 300V, RDS(on) = 2.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.5 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has bee
8.4. Size:1269K fairchild semi
fqp3n50c fqpf3n50c.pdf
QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description 3 A, 500 V, RDS(on) = 2.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 10 nC ) DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to
8.5. Size:555K fairchild semi
fqpf3n60.pdf
April 2000 TM QFET QFET QFET QFET FQPF3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology has been e
8.6. Size:1267K fairchild semi
fqp3n50c fqpf3n50c.pdf
QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description 3 A, 500 V, RDS(on) = 2.5 @ VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 10 nC ) DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to
8.7. Size:724K fairchild semi
fqpf3n25.pdf
November 2013 FQPF3N25 N-Channel QFET MOSFET 250 V, 2.3 A, 2.2 Description Features These N-Channel enhancement mode power field effect 2.3 A, 250 V, RDS(on) = 2.2 (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 1.15 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 4.0 nC) technology has been especially tailored
8.8. Size:892K onsemi
fqpf3n25.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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