AOWF125A60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOWF125A60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 32.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 28 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 34 nS
Cossⓘ - Capacitancia de salida: 85 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
Encapsulados: TO262F
Búsqueda de reemplazo de AOWF125A60 MOSFET
- Selecciónⓘ de transistores por parámetros
AOWF125A60 datasheet
aow125a60 aowf125a60.pdf
AOW125A60/AOWF125A60 TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max
aowf125a60.pdf
AOW125A60/AOWF125A60 TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max
aow12n60 aowf12n60.pdf
AOW12N60/AOWF12N60 600V,12A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOW12N60 & AOWF12N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
aowf12t60p.pdf
AOWF12T60P 600V,12A N-Channel MOSFET General Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max
Otros transistores... AOD950A70, AOD609G, AOW125A60, AOW190A60C, AOW360A70, AOW66613, AOW66616, AOWF095A60, K2611, AOWF160A60, AOWF190A60C, AOWF360A70, AOWF380A60C, AOWF450A70, AOWF600A60, AOWF600A70, AOWF600A70F
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