AOWF190A60C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOWF190A60C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 27 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 70 nS
Cossⓘ - Capacitancia de salida: 55 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Encapsulados: TO262F
Búsqueda de reemplazo de AOWF190A60C MOSFET
- Selecciónⓘ de transistores por parámetros
AOWF190A60C datasheet
..1. Size:464K aosemi
aowf190a60c aow190a60c.pdf 
AOWF190A60C/AOW190A60C TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max
..2. Size:464K aosemi
aowf190a60c.pdf
AOWF190A60C/AOW190A60C TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max
4.1. Size:371K aosemi
aowf190a60.pdf
AOWF190A60 TM 600V, MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max
9.1. Size:286K aosemi
aow12n60 aowf12n60.pdf
AOW12N60/AOWF12N60 600V,12A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOW12N60 & AOWF12N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
9.2. Size:324K aosemi
aowf14n50.pdf
AOW14N50/AOWF14N50 500V, 14A N-Channel MOSFET General Description Product Summary VDS The AOW14N50 & AOWF14N50 have been fabricated 600V@150 using an advanced high voltage MOSFET process that is 14A ID (at VGS=10V) designed to deliver high levels of performance and
9.3. Size:341K aosemi
aowf10n65.pdf
AOW10N65/AOWF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOW10N65/AOWF10N65 is fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 10A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)
9.4. Size:327K aosemi
aowf15s60.pdf
AOW15S60/AOWF15S60 TM 600V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW15S60 & AOWF15S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 63A designed to deliver high levels of performance and RDS(ON),max 0.29 robustness in switching applications. Qg,typ 16nC By providing low RDS(on), Qg an
9.5. Size:222K aosemi
aowf12t60p.pdf
AOWF12T60P 600V,12A N-Channel MOSFET General Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max
9.6. Size:259K aosemi
aowf11s65.pdf
AOW11S65/AOWF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW11S65 & AOWF11S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 13.2nC By providing low RDS(on), Qg
9.7. Size:262K aosemi
aowf12n60.pdf
AOW12N60/AOWF12N60 600V,12A N-Channel MOSFET General Description Product Summary VDS The AOW12N60 & AOWF12N60 have been fabricated 700V@150 12A using an advanced high voltage MOSFET process that is ID (at VGS=10V) designed to deliver high levels of performance and
9.8. Size:262K aosemi
aowf15s65.pdf
AOW15S65/AOWF15S65 TM 650V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW15S65 & AOWF15S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 60A designed to deliver high levels of performance and RDS(ON),max 0.29 robustness in switching applications. Qg,typ 17.2nC By providing low RDS(on), Qg
9.9. Size:496K aosemi
aow10n60 aowf10n60.pdf
AOW10N60/AOWF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOW10N60 & AOWF10N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 10A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
9.10. Size:259K aosemi
aow11s65 aowf11s65.pdf
AOW11S65/AOWF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW11S65 & AOWF11S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 13.2nC By providing low RDS(on), Qg
9.11. Size:542K aosemi
aowf10t60p.pdf
AOW10T60P/AOWF10T60P 600V,10A N-Channel MOSFET General Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 40A Low Ciss and Crss RDS(ON),max
9.12. Size:240K aosemi
aowf12n65.pdf
AOW12N65/AOWF12N65 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOW12N65 & AOWF12N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
9.13. Size:277K aosemi
aowf11s60.pdf
AOW11S60/AOWF11S60 TM 600V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW11S60 & AOWF11S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 11nC By providing low RDS(on), Qg a
9.14. Size:281K aosemi
aowf12n50.pdf
AOW12N50/AOWF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS The AOW12N50 & AOWF12N50 have been fabricated 600V@150 12A using an advanced high voltage MOSFET process that is ID (at VGS=10V) designed to deliver high levels of performance and
9.15. Size:476K aosemi
aowf160a60.pdf
AOWF160A60/AOW160A60 TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max
9.16. Size:299K aosemi
aowf11n70.pdf
AOWF11N70 700V,11A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOWF11N70 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 11A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
9.17. Size:447K aosemi
aowf11n60.pdf
AOWF11N60 600V,11A N-Channel MOSFET General Description Product Summary VDS The AOWF11N60 has been fabricated using an 700V@150 advanced high voltage MOSFET process that is designed ID (at VGS=10V) 11A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)
9.18. Size:240K aosemi
aow12n65 aowf12n65.pdf
AOW12N65/AOWF12N65 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOW12N65 & AOWF12N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
9.19. Size:618K aosemi
aow12n50 aowf12n50.pdf
AOW12N50/AOWF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOW12N50 & AOWF12N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
9.20. Size:277K aosemi
aow11s60 aowf11s60.pdf
AOW11S60/AOWF11S60 TM 600V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW11S60 & AOWF11S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 45A designed to deliver high levels of performance and RDS(ON),max 0.399 robustness in switching applications. Qg,typ 11nC By providing low RDS(on), Qg a
9.21. Size:262K aosemi
aow15s65 aowf15s65.pdf
AOW15S65/AOWF15S65 TM 650V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOW15S65 & AOWF15S65 have been fabricated using the advanced MOSTM high voltage process that is IDM 60A designed to deliver high levels of performance and RDS(ON),max 0.29 robustness in switching applications. Qg,typ 17.2nC By providing low RDS(on), Qg
9.22. Size:432K aosemi
aowf11c60.pdf
AOWF11C60 600V,11A N-Channel MOSFET General Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 80A Low Ciss and Crss RDS(ON),max
9.23. Size:476K aosemi
aow125a60 aowf125a60.pdf
AOW125A60/AOWF125A60 TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max
9.24. Size:476K aosemi
aowf125a60.pdf
AOW125A60/AOWF125A60 TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max
9.25. Size:285K aosemi
aow14n50 aowf14n50.pdf
AOW14N50/AOWF14N50 500V, 14A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOW14N50 & AOWF14N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 14A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
9.26. Size:245K aosemi
aowf10n60.pdf
AOW10N60/AOWF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOW10N60 & AOWF10N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 10A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
Otros transistores... AOW125A60, AOW190A60C, AOW360A70, AOW66613, AOW66616, AOWF095A60, AOWF125A60, AOWF160A60, RU7088R, AOWF360A70, AOWF380A60C, AOWF450A70, AOWF600A60, AOWF600A70, AOWF600A70F, AOWF780A70, AOB095A60L
